In-Duct and Far-Field Mode Detection Techniques

Author(s):  
Pieter Sijtsma ◽  
Jörgen Zillmann
Author(s):  
Jay Anderson ◽  
Mustafa Kansiz ◽  
Michael Lo ◽  
Curtis Marcott

Abstract Failure analysis of organics at the microscopic scale is an increasingly important requirement, with traditional analytical tools such as FTIR and Raman microscopy, having significant limitations in either spatial resolution or data quality. We introduce here a new method of obtaining Infrared microspectroscopic information, at the submicron level in reflection (far-field) mode, called Optical-Photothermal Infrared (O-PTIR) spectroscopy, that can also generate simultaneous Raman spectra, from the same spot, at the same time and with the same spatial resolution. This novel combination of these two correlative techniques can be considered to be complimentary and confirmatory, in which the IR confirms the Raman result and vice-versa, to yield more accurate and therefore more confident organic unknowns analysis.


2014 ◽  
Vol 1 (4) ◽  
pp. e7 ◽  
Author(s):  
Jacopo Biancat ◽  
Chiara Brighenti ◽  
Attilio Brighenti

1997 ◽  
Vol 482 ◽  
Author(s):  
R. K. Sink ◽  
A. C. Abare ◽  
P. Kozodoy ◽  
M. P. Mack ◽  
S. Keller ◽  
...  

AbstractBlue-emitting nitride laser diodes have been fabricated on a-plane sapphire (1120). The active region is composed of 10 In.18Ga.82N quantum wells, which were grown by MOCVD at atmospheric and low pressure in a modified two-flow Thomas-Swan Ltd. horizontal reactor. The chemical precursors used were trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAI), ammonia, and disilane. The n- and p-contacts were formed by depositing Ti/Al/Ni/Au and Ni/Au/Ni/Au, respectively. Diode wafers were thinned to less than 50 μm before they were cleaved along the sapphire r-plane (1120).Lasers show TE polarization, spectral line narrowing, and far field interference patterns above the lasing threshold. The laser emission spectra peak at 410–420 nm. Under pulsed operation at room temperature, the lowest observed threshold current density was 15 kA/cm2 with threshold voltages ranging from 50–90 V. Differential efficiencies are as high as 7% with maximum output powers greater than 50 mW. Near and far field mode patterns are presented. Structures are gain-guided devices with each device occupying a mesa with a width of 125 μm. Device widths range from 3 to 20 μm, with lengths of 500 to 1200 μm.


Author(s):  
L. Gandolfi ◽  
J. Reiffel

Calculations have been performed on the contrast obtainable, using the Scanning Transmission Electron Microscope, in the observation of thick specimens. Recent research indicates a revival of an earlier interest in the observation of thin specimens with the view of comparing the attainable contrast using both types of specimens.Potential for biological applications of scanning transmission electron microscopy has led to a proliferation of the literature concerning specimen preparation methods and the controversy over “to stain or not to stain” in combination with the use of the dark field operating mode and the same choice of technique using bright field mode of operation has not yet been resolved.


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