-Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes-

1997 ◽  
Vol 482 ◽  
Author(s):  
R. K. Sink ◽  
A. C. Abare ◽  
P. Kozodoy ◽  
M. P. Mack ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Emission Spectra ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Lasing Threshold ◽  
Maximum Output ◽  
Far Field ◽  
Field Mode ◽  
Threshold Voltages

AbstractBlue-emitting nitride laser diodes have been fabricated on a-plane sapphire (1120). The active region is composed of 10 In.18Ga.82N quantum wells, which were grown by MOCVD at atmospheric and low pressure in a modified two-flow Thomas-Swan Ltd. horizontal reactor. The chemical precursors used were trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAI), ammonia, and disilane. The n- and p-contacts were formed by depositing Ti/Al/Ni/Au and Ni/Au/Ni/Au, respectively. Diode wafers were thinned to less than 50 μm before they were cleaved along the sapphire r-plane (1120).Lasers show TE polarization, spectral line narrowing, and far field interference patterns above the lasing threshold. The laser emission spectra peak at 410–420 nm. Under pulsed operation at room temperature, the lowest observed threshold current density was 15 kA/cm2 with threshold voltages ranging from 50–90 V. Differential efficiencies are as high as 7% with maximum output powers greater than 50 mW. Near and far field mode patterns are presented. Structures are gain-guided devices with each device occupying a mesa with a width of 125 μm. Device widths range from 3 to 20 μm, with lengths of 500 to 1200 μm.

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Latest developments in Blue-Violet Laser Diodes grown by Molecular Beam Epitaxy

2004 ◽  
Vol 831 ◽  
Author(s):  
V. Bousquet ◽  
M. Kauer ◽  
K. Johnson ◽  
C. Zellweger ◽  
S.E. Hooper ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Pulsed Injection ◽  
Current Duration ◽  
Multiple Quantum Well Laser

ABSTRACTWe report on recent results obtained for InGaN multiple quantum well laser diodes grown by ammonia based Molecular Beam Epitaxy. The laser diodes were grown on freestanding GaN substrates and operated at room temperature under pulsed current injection conditions. For devices with improved p-type doping a threshold current density of 6.7kA.cm−2 was measured for a current pulse duration of 200ns and an operating temperature of 3.9°C. A duty cycle up to 50% with a pulsed injection current duration of 500μs was also achieved at 3.9°C.

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