scholarly journals Cold-Cathode Electron Field Emission of Boron Nitride Thin Film with a MEMS-based Gate for Space Applications

2004 ◽  
Author(s):  
Hannah Goldberg ◽  
Pedro Encarnación ◽  
Dave Morris ◽  
Brian Gilchrist ◽  
Roy Clarke
Keyword(s):  
Thin Film ◽  
Boron Nitride ◽  
Field Emission ◽  
Electron Field Emission ◽  
Cold Cathode ◽  
Space Applications ◽  
Electron Field

The Use of Boron Nitride for Improved Cold-Cathode Electron Field Emission Technology

2004 ◽  
Author(s):  
Jon Van Noord ◽  
Brian Gilchrist ◽  
Roy Clarke ◽  
Pedro A. Encarnacion ◽  
Hannah Goldberg
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Electron Field Emission ◽  
Cold Cathode ◽  
Electron Field

Electron Field Emission Characterization of Nanocrystalline Diamond Thin Film Cold Cathode Devices

1999 ◽  
Vol 593 ◽  
Author(s):  
B. L. Weiss ◽  
A. Badzian ◽  
L. Pilione ◽  
T. Badzian ◽  
W. Drawl ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
Indium Tin Oxide ◽  
Glass Plate ◽  
Diamond Growth ◽  
Electron Field Emission ◽  
Cold Cathode ◽  
Gate Electrode ◽  
Electron Field ◽  
Phase Characterization

ABSTRACTElectron field emission measurements have been performed on thin film cold cathode materials grown, on molybdenum, by a modified MPACVD diamond process. Specifically the modification is due to the addition of nitrogen and oxygen, in varying ratios, during the diamond growth phase. Characterization using Raman spectroscopy shows features at 1190, 1330 and 1550 cm−1. A simple triode device was fabricated for electron emission characterization. KAPTON® film is used as the insulating layer and a Mo mesh is used as the extraction gate electrode. The collector is an indium tin oxide (ITO) coated glass plate which is positively biased with respect to the gate electrode. Field emission characteristics have shown current measurements of greater than I microamp for fields of 40 V/micron. Gate currents are typically 1000 times greater than the emitted current. Issues currently being addressed include improvement in the total emitted current, current stability and device failure. We also present field emission measurements on diamond films grown by HFCVD.

Electron field emission from boron nitride nanofilm and its application to graphite nanofiber

2003 ◽  
Vol 21 (5) ◽  
pp. 2212 ◽  
Author(s):  
Chiharu Kimura ◽  
Tomohide Yamamoto ◽  
Shingo Funakawa ◽  
Masaaki Hirakawa ◽  
Hirohiko Murakami ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Electron Field Emission ◽  
Electron Field

Electron field emission from boron-nitride nanofilms

2002 ◽  
Vol 80 (19) ◽  
pp. 3602-3604 ◽  
Author(s):  
Takashi Sugino ◽  
Chiharu Kimura ◽  
Tomohide Yamamoto
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Electron Field Emission ◽  
Electron Field

Electron field emission from nanostructured cubic boron nitride islands

2008 ◽  
Vol 92 (1) ◽  
pp. 013115 ◽  
Author(s):  
Kungen Teii ◽  
Seiichiro Matsumoto ◽  
John Robertson
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Cubic Boron Nitride ◽  
Electron Field Emission ◽  
Electron Field

Enhanced electron field emission from nanocrystalline orthorhombic boron nitride films

2019 ◽  
Vol 239 ◽  
pp. 79-81
Author(s):  
Xuxin Yang ◽  
Xiaojin Wang ◽  
Quan-Lin Ye ◽  
Hongying Mao ◽  
Yan Cao
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Electron Field Emission ◽  
Electron Field ◽  
Boron Nitride Films
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