High Frequency, High Temperature Fretting Fatigue Investigations

2003 ◽  
Author(s):  
John Matlik ◽  
Thomas Farris
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Fretting Fatigue

High-frequency, high-temperature fretting-fatigue experiments

Wear ◽  
2006 ◽  
Vol 261 (11-12) ◽  
pp. 1367-1382 ◽  
Author(s):  
J.F. Matlik ◽  
T.N. Farris ◽  
F.K. Haake ◽  
G.R. Swanson ◽  
G.C. Duke
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Fretting Fatigue

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 ◽  
Vol T54 ◽  
pp. 283-290 ◽  
Author(s):  
E Janzén ◽  
O Kordina ◽  
A Henry ◽  
W M Chen ◽  
N T Son ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
High Frequency Devices

Effect of Temperature on the Magnetic Permeability of Hexagonal Ferrites

2018 ◽  
Vol 781 ◽  
pp. 36-40
Author(s):  
Olga Dotsenko ◽  
Kirill Frolov ◽  
Dmitry Wagner ◽  
Veronika Dotsenko ◽  
Dmitry Aksentev
Keyword(s):  
Magnetic Properties ◽  
High Temperature ◽  
High Frequency ◽  
Solid State Reaction Method ◽  
Nonlinear Dependence ◽  
Effect Of Temperature ◽  
Hexagonal Ferrites ◽  
Temperature Synthesis ◽  
Reaction Method ◽  
High Temperature Synthesis

In this study, Co0,7Zn1,3W powders were synthesized and investigated at the microwave region. The solid-state reaction method and self-propagating high-temperature synthesis were used to production of the two kinds of hexaferrite powders. The high-frequency magnetic properties under temperature effect have been studied. It is show, that there is a nonlinear dependence on temperature within the 0 – +40 °C temperature range.

Dielectric Properties of Solid Solutions of BiFeO3 with Pb(Ti, Zr)O3 at High Temperature and High Frequency

1968 ◽  
Vol 39 (1) ◽  
pp. 70-74 ◽  
Author(s):  
Robert T. Smith ◽  
Gary D. Achenbach ◽  
Robert Gerson ◽  
W. J. James
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Solid Solutions ◽  
High Frequency

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Full SiC half-bridge module for high frequency and high temperature operation

2015 ◽  
Author(s):  
Slavo Kicin ◽  
Sami Pettersson ◽  
Enea Bianda ◽  
Francisco Canales ◽  
Didier Cottet ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
High Temperature Operation

A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Power Conversion ◽  
Three Dimensional ◽  
Boost Converter ◽  
Switching Frequency ◽  
Power Module ◽  
Element Analysis ◽  
Switching Characteristics ◽  
Three Dimensional Finite Element

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.

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