Reevaluation of flight-derived surface recombination-rate expressions for oxygen and nitrogen

1996 ◽  
Vol 33 (3) ◽  
pp. 451-453 ◽  
Author(s):  
R. N. Gupta
Keyword(s):  
Recombination Rate ◽  
Surface Recombination ◽  
Surface Recombination Rate

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

2016 ◽  
Vol 63 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Andrea Kraxner ◽  
Frederic Roger ◽  
Bernhard Loeffler ◽  
Martin Faccinelli ◽  
Evelin Fisslthaler ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Semiconductor Devices ◽  
Surface Recombination ◽  
Surface Recombination Rate ◽  
Tcad Simulation

scholarly journals О рекомбинационных процессах в пленках CdS-PbS

2018 ◽  
Vol 52 (8) ◽  
pp. 853
Author(s):  
А.Г. Роках ◽  
М.И. Шишкин ◽  
В.С. Аткин
Keyword(s):  
Recombination Rate ◽  
Room Temperature ◽  
Surface Recombination ◽  
Active Surface ◽  
Charge Carriers ◽  
Narrow Gap ◽  
Surface Recombination Rate ◽  
Gap Phase

AbstractThe transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)_0.9–(PbS)_0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

Diagnostics of Recombination Rate Homogeneity in Structures of Large-Area Solar Cells

2004 ◽  
Vol 97-98 ◽  
pp. 139-144
Author(s):  
Vitezslav Benda
Keyword(s):  
Solar Cells ◽  
Recombination Rate ◽  
Monochromatic Light ◽  
Surface Recombination ◽  
Antireflection Coating ◽  
Open Circuit ◽  
Large Area ◽  
Surface Recombination Rate ◽  
Local Defects ◽  
Efficiency And Reliability

The paper refers about a possibility to check recombination rate distribution over the area of power (large-area) solar cells from measured values of open circuit voltage VOC using local irradiation by monochromatic light of different wavelengths (LBIV . Light Beam Initiated Voltage). The method can give information both about recombination centres distribution in large-area solar cells and surface recombination rate at the antireflection coating. From VOC distribution, also position and extent of local defects can also be determined. The method can be used to investigate the influence of technology on characteristics of solar cells as an in-process checking with the aim of increasing efficiency and reliability of solar cells.

scholarly journals Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1392 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Shih-Mao Liu ◽  
Shui-Yang Lien ◽  
Xiao-Ying Zhang ◽  
Yun-Shao Cho ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Inductively Coupled Plasma ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Silicon Wafers ◽  
Black Silicon ◽  
Al2o3 Layer ◽  
Plasma Chemical Vapor Deposition ◽  
Surface Recombination Rate

In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document