Control of Edney IV Interaction by Pulsed Laser Energy Deposition

AIAA Journal ◽  
2005 ◽  
Vol 43 (2) ◽  
pp. 256-269 ◽  
Author(s):  
Russell G. Adelgren ◽  
Hong Yan ◽  
Gregory S. Elliott ◽  
Doyle D. Knight ◽  
Thomas J. Beutner ◽  
...  
Keyword(s):  
Energy Deposition ◽  
Laser Energy ◽  
Pulsed Laser

Pulsed Laser Energy Deposition in Supersonic Flow Over a Cylinder

2022 ◽  
Author(s):  
Shankar Ghosh ◽  
Anurag Chauhan ◽  
Rohan Pattankar
Keyword(s):  
Supersonic Flow ◽  
Energy Deposition ◽  
Laser Energy ◽  
Pulsed Laser

Influence of Pulsed Laser Energy Deposition on Transport Properties and Structure in Trilayer Epitaxial (Y/Pr)Ba2Cu3O7—x/SrTiO3 Films

1993 ◽  
Vol 136 (1) ◽  
pp. 107-111
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Energy Deposition ◽  
Laser Energy ◽  
Pulsed Laser

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Optimization of laser energy deposition for single-shot high aspect-ratio microstructuring of thick BK7 glass

2016 ◽  
Vol 120 (1) ◽  
pp. 013102 ◽  
Author(s):  
Valerio Garzillo ◽  
Vytautas Jukna ◽  
Arnaud Couairon ◽  
Robertas Grigutis ◽  
Paolo Di Trapani ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Energy Deposition ◽  
Laser Energy ◽  
Single Shot ◽  
Bk7 Glass

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

PZT Film and Si Substrate Two-Layer System Patterning Morphology by Femtosecond Pulsed Laser

2007 ◽  
Author(s):  
Shizhou Xiao ◽  
Rui Guo ◽  
Guanghua Cheng ◽  
Yalei Wu ◽  
Wenhao Huang ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Energy ◽  
Threshold Model ◽  
Pulsed Laser ◽  
Direct Writing ◽  
Si Substrate ◽  
Layer System ◽  
Substrate Heating ◽  
Pzt Film ◽  
Femtosecond Pulsed Laser

In this paper, a novel PZT film patterning method by femtosecond laser is proposed. The method is different from traditional dry-etching and wet-etching technology. Femtosecond laser microfabrication technology has several advantages such as high resolution, no mask direct-writing and seldom-heating, etc. A two-layer (PZT thin film and substrate) heating and ablating threshold model is built and the relationship of PZT/Si two-layer system micro ablation morphology depending on laser pulse energy is constructed. From the model and experiment data, we obtain the suitable energy region to pattern PZT film freely without damage Si substrate. A 3μm resolution of PZT pattern is achieved in our experiment. In order to verify the fabrication available of this technology, several micro functional devices are successfully patterned by optimized femtosecond pulsed laser energy and their function are detected. The results prove that the PZT patterning quality is good.

Sign in / Sign up

Export Citation Format

Share Document