scholarly journals Simulation of CZTSSe single solar cells by AFORS-HET software

2020 ◽  
Vol 25 (2) ◽  
pp. 71
Author(s):  
Buthina M. Jandary ◽  
Ayed N. Saleh
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Cadmium Sulphide ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Maximum Efficiency ◽  
Blue Wavelength ◽  
Photovoltaic Characteristics

In this paper, this sthdy simulated photovoltaic characteristics of single heterojunction solar cell with Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using the AFORS-HET program .n-CdS/ZnO double buffer layer is used for hetrostructure interfaces with the absorber layer. The cell performance is investigated against variation of different absorption layer properties such as thickness, carrier concentration. The mixed zinc and cadmium sulphide (Cd1-X Zn X S) is hired as buffer layers and reseach of the effect  its thickness. CdS was selected a buffer because it improves the interface with absorbent CZTSSe and has a lofty  sending  in the blue wavelength. at thickness =1 μm and acceptor concentration (Na=7.9×1015 cm-3) ,a maximum efficiency  (η=11.9%)  is provided  with an open-circuit voltage (Voc=688mv), short-circuit current (Jsc=24.6 mA.cm-2) and fill factor (FF =70.8 of the CZTS solar cell, and Voc=(597 mv), Jsc= (41.7mA.cm-2), FF = (81.2 %) and η= (20.2%) of the CZTSe solar cell.   http://dx.doi.org/10.25130/tjps.25.2020.032

High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap

2019 ◽  
Vol 34 (04) ◽  
pp. 2050053
Author(s):  
Fatemeh Ghavami ◽  
Alireza Salehi
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Efficiency ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Absorber Layer ◽  
Window Layer

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

scholarly journals Effect of absorber layer bandgap of CIGS-based solar cell with (CdS/ZnS) buffer layer

2021 ◽  
Vol 2128 (1) ◽  
pp. 012009
Author(s):  
Hassan Ismail Abdalmageed ◽  
Mostafa Fedawy ◽  
Moustafa H. Aly
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Computational Models ◽  
Short Circuit ◽  
Cadmium Sulphide ◽  
Open Circuit ◽  
Zinc Sulphide ◽  
Absorber Layer ◽  
The Impact

Abstract This article uses computational models to evaluate the potential of copper-indium-gallium-diselenide (CIGS) thin film solar cells. The use of cadmium sulphide (CdS) renders the solar cell environmentally hazardous. A zinc sulphide (ZnS) that is non-toxic and has a large bandgap is studied as a potential replacement for cadmium sulphide in CIGS-based solar cells. The present research focuses on the impact of the CIGS-based solar cell bandgap absorber layer by increasing the absorber layer thickness (0.1-2 μm) using the solar cell simulator simulation tool SCAPS. The basic simulation produces 18.2 % efficiency with a CdS buffer layer, which is 9.95% better than the previously published work. The Simulated efficiency is 22.16% for the CIGS solar cell using ZnS. The simulation of solar cell characteristics of how the thickness of the absorber layer, the gallium grading (efficiency ranges up to 22.25 %) is demonstrated, showing the effect of buffer layer (ZnS) on the current of short-circuit density (JSC), open-circuit voltage (Voc), fill factor (FF), and efficiency (η) of the solar cell.

scholarly journals Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell

2021 ◽  
Vol 24 (02) ◽  
pp. 192-199
Author(s):  
S. Hussain ◽  
◽  
Md. T. Prodhan ◽  
Md. M. Rahman ◽  
◽  
...  
Keyword(s):  
Solar Cell ◽  
Simulation Analysis ◽  
Structural Parameters ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Layer I

Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-μm and p-layer of 3-μm thickness with specific doping concentrations of 1·1020 cm–3 for n-layer and 1·1018 cm–3 for p-layer allow us to achieve the maximum efficiency 29.21%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm2 and the percentage of fill factor value of 88.03%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1·1014 cm–3, and unintentional doping concentration within i-layer is beyond 1.5·1016 cm–3 of the structure.

Ultrathin CdTe solar cells with absorber layer thinner than 0.2 microns

2018 ◽  
Vol 83 (2) ◽  
pp. 20101 ◽  
Author(s):  
Min Wang ◽  
Xun Li ◽  
Deliang Wang
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Absorber Layer ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Different Temperatures ◽  
Total Leakage

In this study, ultrathin Cadmium telluride (CdTe) solar cells with absorber thickness from 50 to 200 nm were fabricated. The short-circuit current (JSC) and open-circuit voltage (VOC) were found to decrease significantly with the thickness of absorber layer decreasing. The decrease of the JSC was mainly because of the insufficient light absorption. Even so, the JSC was still found to be 8.2 mA/cm2, which was about 32% of that of a normal CdTe solar cell when the thickness of absorber layer was reduced to ∼1% of that of a normal CdS/CdTe solar cell, i.e. 50 nm. The reasons, which caused the decrease of VOC, were also discussed in this study. The dark current–voltage characteristics were analyzed and the contribution of ohmic shunting current to the total leakage current was found to increase with the thickness of CdTe absorber layer decreasing. The device characteristics of the ultrathin CdTe solar cells under weak light irradiance and at different temperatures were also investigated. This study provides a guideline for the fabrication of ultrathin CdTe solar cells in the future.

scholarly journals Optimization of Electrical Performance of Defected n+-p-p+ Solar Cell with CdS/BaSi2/Cu2O Heterostructure Using SCAPs 1D

2022 ◽  
Author(s):  
Zohaib Ali ◽  
Khuram Ali
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electrical Performance ◽  
Maximum Efficiency ◽  
Photovoltaic Devices ◽  
Layer Width ◽  
P Type

Abstract Present study investigates the performance of BaSi2 based BSF structure solar cell. SCAPS 1D simulator has been employed to investigate the heterostructure solar cell. To decrease the recombination loss due to minority carrier, a new configuration is proposed by inclusion of the p-type cuprous oxide (Cu2O) as BSF layer. The Cu2O BSF layer width varying in range 0.1 to 0.4 µm to analyze the feasibility of device for optimum performance. The anticipated structure consists of ZnO/CdS/BaSi2/Cu2O layers and offers the maximum efficiency of above 24%. Parameters for example open circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), conversion efficiency (η) and quantum efficiency (QE) of the device have been analyzed graphically. The optimized structure may have significant impact on future development of advanced photovoltaic devices.

Devices Fabrication with Narrow-Bandgap a-SiGe:H Alloys Deposited by HWCVD

2004 ◽  
Vol 808 ◽  
Author(s):  
Yueqin Xu ◽  
Baojie Yan ◽  
Brent P. Nelson ◽  
Eugene Iwaniczko ◽  
Robert C. Reedy ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Germanium ◽  
Fill Factor ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Buffer Layers ◽  
Single Junction

ABSTRACTWe incorporate narrow-gap amorphous silicon germanium (a-SiGe:H) alloys grown by hot-wire chemical vapor deposition (HWCVD) into single-junction n-i-p solar cells, and improve both fill factor (FF) and open-circuit voltage (Voc) by bandgap grading. The Tauc bandgap (ET) of the a-SiGe:H is as low as about 1.25 eV. Previously [1], we obtained a short-circuit current density (Jsc) up to 20 mA/cm2 in an n-i-p device incorporating an ungraded 120-nm i-layer of 1.25-eV a-SiGe:H. However, without buffer layers or bandgap profiling, the fill factor was only 38%, likely due to an abrupt bandgap transition and poor hole collection. To overcome these problems, we have used composition bandgap profiling throughout the i-layer and improved both Voc and FF significantly without any Jsc loss. The solar cell efficiency is improved from 3.55% to 5.85% and Voc rises from 0.475 to 0.550 eV. This improved single-junction a-SiGe:H solar cell has a quantum efficiency of about 48% at l=800 nm and about 15% at l=900 nm. We present details of the bandgap profiling and its effect on device performance.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

An Improved Triple-Tandem Organic Solar Cell

2009 ◽  
Vol 1212 ◽  
Author(s):  
Dewei Zhao ◽  
Xiao Wei Sun ◽  
Lin Ke ◽  
Swee Tiam Tan
Keyword(s):  
Solar Cell ◽  
Small Molecule ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Solar Irradiation ◽  
The Third

AbstractWe present an efficient polymer-small molecule triple-tandem organic solar cell (OSC), consisting of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM) bulk heterojunction as the first and second cells, and small molecules copper phthalocyanine (CuPc) and fullerene (C60) as the third cell on top. These sub-cells are connected by an intermediate layer of Al(1 nm)/MoO3(15 nm), which appears to be highly transparent, structurally smooth, and electrically functional. Compared to our previous all polymer triple-tandem organic solar cells (2.03%), this polymer-small molecule triple-tandem organic solar cell achieves an improved power conversion efficiency of 2.18% with a short-circuit current density (Jsc) = 3.02 mA/cm2, open-circuit voltage (Voc) = 1.51 V, and fill factor (FF) = 47.7% under simulated solar irradiation of 100 mW/cm2 (AM1.5G), which can be attributed to the increased photocurrent generation in the third cell since the third cell has the complementary absorption with two bottom cells despite a slightly reduced Voc.

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