scholarly journals RF-Sputter Deposition of Si-Fe-N Ternary Thin Films and Their Thermal Annealing for Granular Magnetic Films.

1998 ◽  
Vol 45 (1) ◽  
pp. 63-67
Author(s):  
Shinichi Kikkawa ◽  
Hideyuki Sugiyama ◽  
Masao Takahashi
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Magnetic Films ◽  
Sputter Deposition ◽  
Rf Sputter Deposition

Rf-sputter deposition of boron nitride thin films

1991 ◽  
Vol 59-60 ◽  
pp. 341-343 ◽  
Author(s):  
Kikkawa Shinichi ◽  
Takahashi Mari ◽  
Gu Xiaoyi ◽  
Kanamaru Fumikazu ◽  
Katayama Saichi ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Sputter Deposition ◽  
Rf Sputter Deposition

Some Aspects of Deposition Parameters of RF Sputtered Ferromagnetic Film Germane to the Study of Magnetoresistive Sensing Devices

2011 ◽  
Vol 264-265 ◽  
pp. 160-165 ◽  
Author(s):  
Pervez Akhtar ◽  
Tariq Javid Ali ◽  
Arshad Aziz
Keyword(s):  
Thin Films ◽  
Anisotropy Field ◽  
Ferromagnetic Film ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Sputter Deposition ◽  
Deposition Condition ◽  
Magnetic Field Sensors ◽  
Deposition Parameters ◽  
Materials Used

The paper describes results of investigation on sputtered NiFe Films to determine the sputter deposition condition that could produce magnetic field sensors with the desired magnetic and magnetoresistive properties. The magnetic thin films materials used in such devices should have a low coercive force, a low anisotropy field and low magnetization dispersion, α50 with high magnetoresistance ratio. From the results presented, it is shown that that the most useful films for 82%Ni-Fe composition are produced at 200 °C-250 °C moderate substrate temperatures. It is also possible to specify the substrate bias potential and sputter gas pressure sputter deposition conditions under which the 82%Ni-Fe thin films may be employed for the production of magnetoresistine sensors with near optimum magnetic and magnetoresistive properties. The work also provide understanding of the effects on the magnetic properties of sputtered magnetic films that is very limited as current literature is almost entirely limited to evaporated magnetic films.

Interface Reaction Behavior between Mn and SiO2 Formed by RF Sputter Deposition

2012 ◽  
Vol 508 ◽  
pp. 48-51
Author(s):  
Byeong Taek Bae ◽  
Hideaki Nakano ◽  
Junichi Koike
Keyword(s):  
Thin Films ◽  
Barrier Layer ◽  
Reaction Layer ◽  
Interface Reaction ◽  
Sputter Deposition ◽  
Reaction Behavior ◽  
Post Annealing ◽  
Rf Sputter Deposition ◽  
Adsorbed Moisture

The Present Work Investigated the Effects of Adsorbed Moisture in Substrates on the Growth of a Self-Forming Barrier Layer between Mn and SiO2. In Order to Control the Adsorbed Moisture, the Substrates of TEOS-SiO2/Si Were Pre-Annealed in Vacuum at Various Temperatures. Then, Mn Thin Films Were Deposited on the Substrate with or without Pre-Annealing. The Results of Interface Reaction after Additional Post-Annealing Indicated that an Interface Reaction Layer Becomes Thinner with Decreasing the Adsorbed Moisture in the SiO2Substrates.

RF-Sputter Deposition of Nd1-xSrxCoO3 Oriented Thin Films

2007 ◽  
Author(s):  
L MALAVASI ◽  
C SANNA ◽  
N LAMPIS ◽  
A LEHMANN ◽  
C TEALDI ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Rf Sputter Deposition

Growth of Mn-doped ZnO thin films by rf-sputter deposition and lattice relaxation by energetic ion impact

2015 ◽  
Vol 350 ◽  
pp. 31-37 ◽  
Author(s):  
N. Matsunami ◽  
M. Itoh ◽  
M. Kato ◽  
S. Okayasu ◽  
M. Sataka ◽  
...  
Keyword(s):  
Thin Films ◽  
Lattice Relaxation ◽  
Sputter Deposition ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Ion Impact ◽  
Mn Doped ◽  
Rf Sputter Deposition

scholarly journals XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition

2013 ◽  
Vol 03 (01) ◽  
pp. 101-107 ◽  
Author(s):  
N. Matsunami ◽  
H. Kakiuchida ◽  
M. Sataka ◽  
S. Okayasu
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Rf Sputter Deposition
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