scholarly journals Design of area-efficient GHz range current mode frequency synthesizer using standard CMOS technology

2019 ◽  
Vol 70 (4) ◽  
pp. 323-328
Author(s):  
Dan-Dan Zheng ◽  
Yu-Bin Li ◽  
Chang-Qi Wang ◽  
Kai Huang ◽  
Xiao-Peng Yu
Keyword(s):  
Frequency Synthesizer ◽  
Frequency Tuning ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Mode Frequency ◽  
Loop Filter ◽  
Silicon Area ◽  
Power Efficient ◽  
A Current

Abstract In this paper, an area and power efficient current mode frequency synthesizer for system-on-chip (SoC) is proposed. A current-mode transformer loop filter suitable for low supply voltage is implemented to remove the need of a large capacitor in the loop filter, and a current controlled oscillator with additional voltage based frequency tuning mechanism is designed with an active inductor. The proposed design is further integrated with a fully programmable frequency divider to maintain a good balance among output frequency operating range, power consumption as well as silicon area. A test chip is implemented in a standard 0.13 µm CMOS technology, measurement result demonstrates that the proposed design has a working range from 916 MHz to 1.1 l GHz and occupies a silicon area of 0.25 mm2 while consuming 8.4 mW from a 1.2 V supply.

scholarly journals A Ku-Band Fractional-N Frequency Synthesizer with Adaptive Loop Bandwidth Control

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 109
Author(s):  
Youming Zhang ◽  
Xusheng Tang ◽  
Zhennan Wei ◽  
Kaiye Bao ◽  
Nan Jiang
Keyword(s):  
Phase Noise ◽  
Frequency Synthesizer ◽  
Frequency Tuning ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Loop Filter ◽  
Chip Area ◽  
Loop Bandwidth ◽  
Bandwidth Control ◽  
Ku Band

This paper presents a Ku-band fractional-N frequency synthesizer with adaptive loop bandwidth control (ALBC) to speed up the lock settling process and meanwhile ensure better phase noise and spur performance. The theoretical analysis and circuits implementation are discussed in detail. Other key modules of the frequency synthesizer such as broadband voltage-controlled oscillator (VCO) with auto frequency calibration (AFC) and programable frequency divider/charge pump/loop filter are designed for integrity and flexible configuration. The proposed frequency synthesizer is fabricated in 0.13 μm CMOS technology occupying 1.14 × 1.18 mm2 area including ESD/IOs and pads, and the area of the ALBC is only 55 × 76 μm2. The out frequency can cover from 11.37 GHz to 14.8 GHz with a frequency tuning range (FTR) of 26.2%. The phase noise is −112.5 dBc/Hz @ 1 MHz and −122.4 dBc/Hz @ 3 MHz at 13 GHz carrier frequency. Thanks to the proposed ALBC, the lock-time can be shortened by about 30% from about 36 μs to 24 μs. The chip area and power consumption of the proposed ALBC technology are slight, but the beneficial effect is significant.

scholarly journals Design of Power Efficient Phase Frequency Detector and Voltage Controlled Oscillator for PLL Applications in 45 nm CMOS Technology

2021 ◽  
Vol 23 (11) ◽  
pp. 184-197
Author(s):  
Pawan Srivastava ◽  
◽  
Dr. Ram Chandra Singh Chauhan ◽  
Keyword(s):  
Frequency Synthesizer ◽  
Supply Voltage ◽  
Process Variations ◽  
Clock And Data Recovery ◽  
Cmos Technology ◽  
Monte Carlo Analysis ◽  
Voltage Controlled Oscillator ◽  
Phase Frequency Detector ◽  
Power Efficient ◽  
Frequency Detector

A novel phase frequency detector is designed which is made up of 16 transistors whereas conventional is of 48 transistors. This paper also presented the design of charge pump circuit and current starved VCO (CSVCO). These are the critical blocks that are widely used for applications like clock and data recovery circuit, PLL, frequency synthesizer. The proposed PFD eliminates the reset circuit using pass transistor logic and operates effectively at higher frequencies. The circuits are designed using Cadence Virtuoso v6.1 in 45nm CMOS technology having supply voltage 1V. It was found that the power consumption of PFD is 138.2 nW which is significantly lesser than other designs. CSVCO also analysed at operating frequency of 10 MHz to give output oscillation frequency of 1.119 GHz with power dissipation of 18.91 μW. Corner analysis done for both the PFD and CSVCO for various process variations. Monte Carlo analysis also done for the proposed PFD and presented CSVCO to test the circuit reliableness.

scholarly journals High Speed Power Efficient CMOS Inverter Based Current Comparator in UMC 90 nm Technology

2016 ◽  
Vol 6 (1) ◽  
pp. 90
Author(s):  
Veepsa Bhatia ◽  
Neeta Pandey ◽  
Asok Bhattacharyya
Keyword(s):  
High Speed ◽  
Supply Voltage ◽  
Average Power ◽  
Current Mode ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Cmos Inverter ◽  
Power Efficient ◽  
Current Comparator ◽  
Average Power Consumption

A novel power-speed efficient current comparator is proposed in this paper. It comprises of only CMOS inverters in its structure, employing a simple biasing method. The structure offers simplicity of design. It posesses the very desirable features of high speed and low power dissipation, making this structure a highly desirable one for various current mode applications. The simulations have been performed using UMC 90 nm CMOS technology and the results demonstrate the propagation delay of about 3.1 ns and the average power consumption of 24.3 µW for 300 nA input current at supply voltage of 1V.

High Speed Power Efficient CMOS Inverter Based Current Comparator in UMC 90 nm Technology

2016 ◽  
Vol 6 (1) ◽  
pp. 90 ◽  
Author(s):  
Veepsa Bhatia ◽  
Neeta Pandey ◽  
Asok Bhattacharyya
Keyword(s):  
High Speed ◽  
Supply Voltage ◽  
Average Power ◽  
Current Mode ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Cmos Inverter ◽  
Power Efficient ◽  
Current Comparator ◽  
Average Power Consumption

A novel power-speed efficient current comparator is proposed in this paper. It comprises of only CMOS inverters in its structure, employing a simple biasing method. The structure offers simplicity of design. It posesses the very desirable features of high speed and low power dissipation, making this structure a highly desirable one for various current mode applications. The simulations have been performed using UMC 90 nm CMOS technology and the results demonstrate the propagation delay of about 3.1 ns and the average power consumption of 24.3 µW for 300 nA input current at supply voltage of 1V.

scholarly journals MCML D-Latch Using Triple-Tail Cells: Analysis and Design

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Kirti Gupta ◽  
Neeta Pandey ◽  
Maneesha Gupta
Keyword(s):  
High Speed ◽  
Analytical Modeling ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Power Efficient ◽  
Analysis And Design ◽  
Current Mode Logic ◽  
Voltage Swing

A new low-voltage MOS current mode logic (MCML) topology for D-latch is proposed. The new topology employs a triple-tail cell to lower the supply voltage requirement in comparison to traditional MCML D-latch. The design of the proposed MCML D-latch is carried out through analytical modeling of its static parameters. The delay is expressed in terms of the bias current and the voltage swing so that it can be traded off with the power consumption. The proposed low-voltage MCML D-latch is analyzed for the two design cases, namely, high-speed and power-efficient, and the performance is compared with the traditional MCML D-latch for each design case. The theoretical propositions are validated through extensive SPICE simulations using TSMC 0.18 µm CMOS technology parameters.

Low Power, Wide Range Synthesizer for 534MHz–18.56GHz Band with FoM of −192.45dBc/Hz

2021 ◽  
pp. 2250032
Author(s):  
Gaurav Kumar Sharma ◽  
Arun Kishor Johar ◽  
D. Boolchandani
Keyword(s):  
Figure Of Merit ◽  
Satellite Communication ◽  
Frequency Synthesizer ◽  
Supply Voltage ◽  
Wide Spectrum ◽  
Charge Pump ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Loop Filter ◽  
Wide Range

A wide range frequency synthesizer is designed with the help of dual voltage tunable Differential Ring Oscillator (DRO). Frequency ranging from 534[Formula: see text]MHz to 18.56[Formula: see text]GHz can be generated using the proposed synthesizer. As proposed circuit utilizes dual voltage tunable DRO, a select input is provided to control the output frequency range. Logic low value (0[Formula: see text]V) of select input generates frequencies from 534[Formula: see text]MHz to 5.08[Formula: see text]GHz whereas logic high value (1.1[Formula: see text]V) of select input enables the frequency generation in the range of 5.08[Formula: see text]GHz to 18.56[Formula: see text]GHz. This work utilizes a single charge pump and single loop filter along with charge pump and bias control circuit. Proposed circuit is designed in GPDK 45-nm CMOS technology with supply voltage of 1.1[Formula: see text]V. Power consumption of the proposed circuits is 2.88[Formula: see text]mW while generating frequency of 7.84[Formula: see text]GHz. Proposed synthesizer demonstrates Figure of Merit (FoM2) of [Formula: see text][Formula: see text]dBc/Hz at this frequency. Because of such a wide spectrum, this synthesizer is well suited in the field of satellite communication, GPS and navigation.

scholarly journals Current mode pulse width modulation/pulse position modulation based on phase lock loop

2017 ◽  
Vol 68 (3) ◽  
pp. 180-187
Author(s):  
Pichet Wisartpong ◽  
Vorapong Silaphan ◽  
Sunee Kurutach ◽  
Paramote Wardkein
Keyword(s):  
Pulse Width ◽  
Pulse Width Modulation ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Phase Lock Loop ◽  
Center Frequency ◽  
Loop Filter ◽  
Chip Area ◽  
Fully Integrated

Abstract In this paper, the fully integrated CMOS current mode PLL with current input injects at the place of input or output of the loop filter without summing amplifier circuit. It functions as PPM and PWM circuit is present. In addition, its frequency response is an analysis which electronic tuning BPF and LPF are obtained. The proposed circuit has been designed with 0.18 μm CMOS technology. The simulation results of this circuit can be operated at 2.5 V supply voltage, at center frequency 100 MHz. The linear range of input current can be adjusted from 43 μA to 109 μA, and the corresponding duty cycle of pulse width output is from 93% to 16% and the normalized pulse position is from 0.93 to 0.16. The power dissipation of this circuit is 4.68 mW with the total chip area is 28 μm × 60 μm.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

scholarly journals A Current-Mode TransImpedance Amplifier for Capacitive Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari
Keyword(s):  
Current Mode ◽  
Cmos Technology ◽  
Detection Sensitivity ◽  
Transimpedance Amplifier ◽  
Current Conveyors ◽  
Interface Circuit ◽  
Linear Behavior ◽  
Board Level ◽  
Voltage Conversion ◽  
A Current

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.

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