scholarly journals Transfer Logic Gates With Electrical And Optical Inputs For Large Area Electronics

2015 ◽  
Vol 66 (4) ◽  
pp. 235-237
Author(s):  
Zsolt J. Horváth
Keyword(s):  
Thin Film ◽  
Logic Gates ◽  
Large Area ◽  
Thin Film Technology ◽  
Non Volatile Memory ◽  
New Type ◽  
Volatile Memory ◽  
Application Fields ◽  
Logic Functions ◽  
Large Area Electronics

Abstract A new type of transfer logic gates with both electrical and/or optical inputs and electrical outputs are proposed, which can be prepared by thin film technology. The possible realization of different logic functions and non-volatile memory logic arrays are demonstrated. The possible application fields are briefly discussed.

Programmable polymer thin film and non-volatile memory device

2004 ◽  
Vol 3 (12) ◽  
pp. 918-922 ◽  
Author(s):  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Charles R. Szmanda ◽  
Liping Ma ◽  
Yang Yang
Keyword(s):  
Thin Film ◽  
Memory Device ◽  
Polymer Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory

Highly stable switching and long retention property of spin coated ZnO thin film for resistive non-volatile memory application

2019 ◽  
Vol 6 (9) ◽  
pp. 096429 ◽  
Author(s):  
Kiran D More ◽  
Vijaykiran N Narwade ◽  
Devidas I Halge ◽  
Jagdish W Dadge ◽  
Rajendra S Khairnar ◽  
...  
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Large Area Electronics for Flat Panel Imagers Progress and Challenges

2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
And Performance ◽  
Flat Panel Imagers ◽  
Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles

2011 ◽  
Vol 519 (15) ◽  
pp. 5208-5211 ◽  
Author(s):  
W.K. Lee ◽  
K.C. Aw ◽  
H.Y. Wong ◽  
K.Y. Chan ◽  
M. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Zinc Oxide Nanoparticles ◽  
Thin Film Transistor ◽  
Oxide Nanoparticles ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Non Volatile Memory ◽  
Volatile Memory
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