An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles

2011 ◽  
Vol 519 (15) ◽  
pp. 5208-5211 ◽  
Author(s):  
W.K. Lee ◽  
K.C. Aw ◽  
H.Y. Wong ◽  
K.Y. Chan ◽  
M. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Zinc Oxide Nanoparticles ◽  
Thin Film Transistor ◽  
Oxide Nanoparticles ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Non Volatile Memory ◽  
Volatile Memory

ZnO as a dielectric for organic thin film transistor-based non-volatile memory

2009 ◽  
Vol 86 (10) ◽  
pp. 2127-2131 ◽  
Author(s):  
N. Tjitra Salim ◽  
K.C. Aw ◽  
W. Gao ◽  
Z.W. Li ◽  
B. Wright
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Non Volatile Memory ◽  
Volatile Memory

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

Physically Based Compact Mobility Model for Organic Thin-Film Transistor

2016 ◽  
Vol 63 (5) ◽  
pp. 2057-2065 ◽  
Author(s):  
T. K. Maiti ◽  
L. Chen ◽  
H. Zenitani ◽  
H. Miyamoto ◽  
M. Miura-Mattausch ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Mobility Model ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Physically Based

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

The detection of polyamines by an extended gate-type organic transistor functionalized with a carboxylate attached 1,3,4-thiadiazole derivative

2021 ◽  
Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pattern Recognition ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Electrode ◽  
Organic Transistor ◽  
Thiadiazole Derivative

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...

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