Measurement of Plasticity Gradients with Scanning Probe Microscopy

1993 ◽  
Vol 318 ◽  
Author(s):  
James D. Kiely ◽  
Dawn A. Bonnell
Keyword(s):  
Fracture Surface ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Ceramic System ◽  
Force Microscopy ◽  
Metal Fracture ◽  
Atomic Force ◽  
Metal Ceramic

ABSTRACTScanning Tunneling and Atomic Force Microscopy were used to characterize the topography of fractured Au /sapphire interfaces. Variance analysis which quantifies surface morphology was developed and applied to the characterization of the metal fracture surface of the metal/ceramic system. Fracture surface features related to plasticity were quantified and correlated to the fracture energy and energy release rate.

SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Nanoscale Patterning ◽  
Atomic Force ◽  
Probe Microscope ◽  
Molecular Manipulation

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

scholarly journals Исследование пленок диметилдиимида перилентетракарбоновой кислоты методами циклической термодесорбции и сканирующей зондовой микроскопии

2018 ◽  
Vol 60 (2) ◽  
pp. 255
Author(s):  
А.Е. Почтенный ◽  
А.Н. Лаппо ◽  
И.П. Ильюшонок
Keyword(s):  
Atomic Force Microscopy ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Bandgap Width ◽  
Kelvin Probe ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Probe Spectroscopy

AbstractSome results of studying the direct-current (DC) conductivity of perylenetetracarboxylic acid dimethylimide films by cyclic oxygen thermal desorption are presented. The microscopic parameters of hopping electron transport over localized impurity and intrinsic states were determined. The bandgap width and the sign of major current carriers were determined by scanning probe microscopy methods (atomic force microscopy, scanning probe spectroscopy, and photoassisted Kelvin probe force microscopy). The possibility of the application of photoassisted scanning tunneling microscopy for the nanoscale phase analysis of photoconductive films is discussed.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

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