scholarly journals Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation

2021 ◽  
Vol 70 (10) ◽  
pp. 732-737
Author(s):  
Tsutomu ARAKI ◽  
Faizulsalihin Bin ABAS ◽  
Ryouichi FUJITA ◽  
Shinichiro MOURI
Keyword(s):  
Surface Modification ◽  
Threading Dislocation ◽  
Beam Irradiation ◽  
Dislocation Reduction

Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation

2018 ◽  
Vol 57 (3) ◽  
pp. 035502 ◽  
Author(s):  
Faizulsalihin Bin Abas ◽  
Ryoichi Fujita ◽  
Shinichiro Mouri ◽  
Tsutomu Araki ◽  
Yasushi Nanishi
Keyword(s):  
Surface Modification ◽  
Threading Dislocation ◽  
Beam Irradiation ◽  
Dislocation Reduction

Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy

MRS Advances ◽  
2018 ◽  
Vol 3 (18) ◽  
pp. 931-936
Author(s):  
F. B. Abas ◽  
R. Fujita ◽  
S. Mouri ◽  
T. Araki ◽  
Y. Nanishi
Keyword(s):  
Surface Modification ◽  
Electrical Properties ◽  
Dislocation Density ◽  
Hall Effect Measurement ◽  
Threading Dislocation ◽  
X Ray ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Order Of Magnitude

ABSTRACTThe objective of this study was to investigate the relationship between the thickness of N radical irradiated InN template with crystallographic quality and electrical properties of InN film grown with the previously proposed method, in situ surface modification by radical beam irradiation. In this study, three InN samples were grown with this method on different thickness of irradiated templates. The crystallographic quality of InN films was analyzed by X-ray diffraction and the electrical properties were studied by Hall effect measurement. InN grown on 100 nm thick irradiated template shows lower full-width at half-maximum of X-ray rocking curves and lower carrier concentration compared to InN grown on 200 nm and 450 nm thick irradiated templates. Transmission electron microscopy revealed that threading dislocation density in the InN film decreased by an order of magnitude to ∼4.6×109cm-2. These results suggest that this method is possible for reduction of threading dislocation density in InN and the thickness of irradiated template should be minimized for higher crystallographic quality and electrical properties of the entire InN film.

TEM characterization of dislocation reduction processes in GaAs/Si

1989 ◽  
Vol 47 ◽  
pp. 590-591
Author(s):  
R.A. Herring ◽  
P.N. Uppal ◽  
S.P. Svensson ◽  
J.S. Ahearn
Keyword(s):  
Lattice Mismatch ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Growth Interface ◽  
Dislocation Reduction ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
Interfacial Dislocations ◽  
Strained Layer Superlattices

A high density of interfacial dislocations are needed at the GaAs/Si interface to alleviate the 4% lattice mismatch between GaAs and Si. Some remnant dislocations thread through the epilayer and follow the growth interface. Current growth methods are not able to obtain acceptable threading dislocation densities (104 – 105) for devices. Many methods can be used to reduce the number of threading dislocations which include misorienting the substrate to enhance the slip of dislocations on specific [110]{111} planes, annealing during and after growth, and adding strained layer superlattices (SLS's) to block dislocations. Conventional TEM (CTEM), performed using a JEM 100c, has been used to characterize threading dislocations in the epilayer of a GaAs/Si material where in situ thermal annealing and SLS's force dislocation reactions and thereby reduce the threading dislocation density. Using TEM we have viewed dislocations under many two-beam diffraction conditions and with the help of a stereogram have determined their Burgers vectors (b), line directions (u) and habit planes (R).

In Situ Optical Observation and Control of Initial Stages of GaAs Growth On Caf2 Surface Modified by Electron Beam Irradiation

1996 ◽  
Vol 448 ◽  
Author(s):  
K. Kawasaki ◽  
K. Tsutsui
Keyword(s):  
Surface Modification ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
In Situ Observation ◽  
Initial Growth ◽  
Beam Irradiation ◽  
Electron Dose ◽  
Surface Modified ◽  
And Control

AbstractWe investigated the electron beam induced surface modification of CaF2(1 11) and initial stage of GaAs growth on the modified CaF2 surface by means of the surface photoabsorption technique and atomic force microscopy (AFM). The CaF2 surface was modified by 300 eV electron beam irradiation at 200°C in a As4 molecular beam. The amount of adsorbed As atoms increased with electron dose and it follows Langmuir adsorption principle and saturated at a value equivalent to I monolayer adsorption. In situ observation of GaAs growth on this modified surface clarified that the sticking coefficient of GaAs on CaF2 surface was drastically improved by the surface modification. AFM observation revealed that the surface roughness of initial growth of GaAs on modified CaF2 was improved at the growth temperature of 550°C

In situ TEM observation of novel chemical evolution of MnBr2 catalyzed by Cu under electron beam irradiation

2017 ◽  
Vol 686 ◽  
pp. 44-48 ◽  
Author(s):  
Wei Wang ◽  
Xianwei Bai ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
Yuan Yao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Evolution ◽  
Electron Beam Irradiation ◽  
In Situ Tem ◽  
Beam Irradiation

In situ manipulation of E-beam irradiation-induced nanopore formation on molybdenum oxide nanowires

2021 ◽  
Vol 544 ◽  
pp. 148874
Author(s):  
Yi-Hsin Ting ◽  
Min-Ci Wu ◽  
Yoshitaka Aoyama ◽  
Kuo-Chang Lu ◽  
Wen-Wei Wu
Keyword(s):  
Molybdenum Oxide ◽  
Beam Irradiation ◽  
Oxide Nanowires
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