scholarly journals The Relationship between Hillock Formation Temperature and Initial Residual Stress in Copper Thin Films with Different Crystal Grain Size

2013 ◽  
Vol 62 (7) ◽  
pp. 457-463 ◽  
Author(s):  
Kazuya KUSAKA ◽  
Yuma YAMADA
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Formation Temperature ◽  
Initial Residual Stress ◽  
Hillock Formation ◽  
The Relationship

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Effects of Sputtering Conditions on Texture, Microstructure and Magnetic Properties of the CoCrPt/NiAl Thin Films

1998 ◽  
Vol 517 ◽  
Author(s):  
Y.-N. Hsu ◽  
D. E. Laughlin ◽  
D. N. Lambeth
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetic Properties ◽  
Optimum Pressure ◽  
Grain Sizes ◽  
Maximum Value ◽  
Sputtering Power ◽  
Sputtering Pressure ◽  
The Relationship ◽  
Microstructure And Magnetic Properties

AbstractThe effects of sputtering argon pressures and sputtering power on the microstructure, texture and magnetic properties of NiAI underlayers on CoCrPt films were investigated. In this paper, the relationship between the sputtering conditions, microstructure, crystallographic texture and magnetic properties of these thin films will be discussed. By controlling the sputtering pressure and sputtering power, the texture and microstructure of NiAI underlayers were found to vary. This in turn was found to influence the magnetic properties of CoCrPt thin films. It was found that 10 mtorr is the optimum pressure to deposit the NiAl thin films to obtain the best magnetic properties for our system. At this argon pressure, the coercivity reached a maximum value because of the strongest CoCrPt (1010) texture and smallest grain size. At lower argon pressures (< 10 mtorr), NiAI tended to have a (110) texture reducing the CoCrPt (1010) texture, which in turn reduced the CoCrPt coercivity and S*. Also, high NiAl deposition pressures (>30 mtorr) yielded larger grains and a weaker CoCrPt (1010) texture, thereby decreasing the coercivity of the CoCrPt films. Increasing the sputtering power has been found to increase the CoCrPt coercivity and S* value. However, the grain sizes of the CoCrPt/NiAl thin films deposited at higher sputtering power were larger than those obtained at lower sputtering power.

scholarly journals Effect of Annealing on Microstructure and Mechanical Properties of Magnetron Sputtered Cu Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Shiwen Du ◽  
Yongtang Li
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Grain Size ◽  
Strain Energy ◽  
Texture Coefficient ◽  
Elastic Strain Energy ◽  
Interface Energy ◽  
Cu Films ◽  
Si Substrates

Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Microstructure evolution and mechanical properties of Cu thin films with different annealing temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and nanoindentation. The surface morphology, roughness, and grain size of the Cu films were characterized by AFM. The minimization of energy including surface energy, interface energy, and strain energy (elastic strain energy and plastic strain energy) controlled the microstructural evolution. A classical Hall-Petch relationship was exhibited between the yield stress and grain size. The residual stress depended on crystal orientation. The residual stress as-deposited was of tension and decreased with decreasing of (111) orientation. The ratio of texture coefficient of (111)/(220) can be used as a merit for the state of residual stress.

X-Ray Measurement of Residual Stress Distribution in Sputtered Cu Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 1649-1654 ◽  
Author(s):  
Yoshiaki Akiniwa ◽  
Taku Sakaue
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Stress Distribution ◽  
Residual Stress Distribution ◽  
The Other ◽  
X Ray ◽  
Maximum Value ◽  
Other Hand ◽  
Target Power

Three kinds of copper thin films were fabricated by RF-magnetron sputtering. The target power was selected to be 10 and 150 W to change the properties of the films. Thin glass sheet was used as a substrate. For the target power of 150 W, the deposition time was selected to be 7 and 40 min. The thickness was 0.6 μm and 2.9 μm, and the grain size measured was 243 nm and 450 nm, respectively. The grain size of thicker film was larger than that of thinner one. On the other hand, for the target power of 10 W, the thickness and grain size were 2.4 μm and 54 nm, respectively. The grain size depends on the target power. The residual stress distribution in the films was measured by X-ray method. Several methods such as the grazing incidence X-ray diffraction method, the constant penetration depth method and the conventional sin2ψ method were adopted. The measured weighted average stress increased with increasing depth. After taking the maximum value at about 0.3 μm from the surface, the value decreased with increasing depth. The stress distribution near the surface in the films deposited at 150 W was almost identical irrespective of thickness. On the other hand, for the target power of 10 W, the stress distribution shifted to compression side. The reason could be explained by the effect of the thermal residual stress. The real stress distribution was estimated by using the optimization technique. The stress took the maximum value at 0.5 μm from the surface, and was compressive near the substrate. .

CRITICAL SURFACE TENSION, CRITICAL SURFACE ENERGY AND PARACHOR OF MnSO3 THIN FILM

2016 ◽  
Vol 23 (03) ◽  
pp. 1650009 ◽  
Author(s):  
İ. A. KARIPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Tension ◽  
Grain Size ◽  
Surface Energy ◽  
Film Thickness ◽  
Critical Surface ◽  
Critical Surface Tension ◽  
Average Grain Size ◽  
The Relationship

This study examines the critical surface energy of manganese sulfite (MnSO[Formula: see text] crystalline thin film, produced via chemical bath deposition (CBD) on substrates. In addition, parachor, which is an important parameter of chemical physics, and its relationship with grain size, film thickness, etc., has been investigated for thin films. For this purpose, MnSO3 thin films were deposited at room temperature using different deposition times. Structural properties of the films, such as film thickness and average grain size, were examined using X-ray diffraction; film thickness and surface properties were measured by and atomic force microscope; and critical surface tension of MnSO3 thin films was measured with Optical Tensiometer and calculated using Zisman method. The results showed that critical surface tension and parachor of the films have varied with average grain size and film thickness. Critical surface tension was calculated as 32.97, 24.55, 21.03 and 12.76[Formula: see text]mN/m for 14.66, 30.84, 37.07 and 44.56[Formula: see text]nm grain sizes, respectively. Film thickness and average grain size have been increased with the deposition time and they were found to be negatively correlated with surface tension and parachor. The relationship between film thickness and parachor was found as [Formula: see text] whereas the relationship between average grain size and parachor was found as [Formula: see text] We also showed the relationships between parachor and some thin films parameters.

Effect of texture and grain size on the residual stress of nanocrystalline thin films

2017 ◽  
Vol 25 (7) ◽  
pp. 075004 ◽  
Author(s):  
Lei Cao ◽  
Arkaprabha Sengupta ◽  
Daniel Pantuso ◽  
Marisol Koslowski
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Nanocrystalline Thin Films

scholarly journals Effect of as-deposited residual stress on transition temperatures of VO2 thin films

2004 ◽  
Vol 19 (8) ◽  
pp. 2306-2314 ◽  
Author(s):  
Kuang Yue Tsai ◽  
Tsung-Shune Chin ◽  
Han-Ping D. Shieh ◽  
Cheng Hsin Ma
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Transition Temperatures ◽  
X Ray ◽  
Core Electrons ◽  
The Difference ◽  
Vo2 Thin Films ◽  
The Relationship ◽  
Oxygen Atoms

Transmittance loops upon thermal cycling of VO2 thin films were found to change among films with different fabrication conditions that lead to different transition temperatures (Tts) from that of a strain-free VO2 single crystal, 68 °C. The residual stresses in the films quantitatively determined from x-ray diffractometry were used to explain this variation. Electron spectroscopy for chemical analysis spectra showed that the difference in the binding energy of core electrons 2p1/2 and 2p3/2 of the vanadium atom are affected by residual stress and proportional to Tts of the films. The bond length between vanadium and oxygen atoms at room temperature varies with different residual stresses and, furthermore, affects the movements of both atoms during phase change (and hence the Tt of VO2 thin films). Residual stresses also affect the hysteresis span of the transmittance loop. The relationship between the residual stress of as-deposited VO2 films and the relative positions between vanadium and oxygen atoms are also delineated in detail.

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