Residual Stress in Electrodeposited Cu Thin Films: Understanding the Combined Effects of Growth Rate and Grain Size

2017 ◽  
Vol 164 (13) ◽  
pp. D828-D834 ◽  
Author(s):  
A. M. Engwall ◽  
Z. Rao ◽  
E. Chason
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Growth Rate ◽  
Grain Size ◽  
Combined Effects

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

scholarly journals Effect of Annealing on Microstructure and Mechanical Properties of Magnetron Sputtered Cu Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Shiwen Du ◽  
Yongtang Li
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Grain Size ◽  
Strain Energy ◽  
Texture Coefficient ◽  
Elastic Strain Energy ◽  
Interface Energy ◽  
Cu Films ◽  
Si Substrates

Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Microstructure evolution and mechanical properties of Cu thin films with different annealing temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and nanoindentation. The surface morphology, roughness, and grain size of the Cu films were characterized by AFM. The minimization of energy including surface energy, interface energy, and strain energy (elastic strain energy and plastic strain energy) controlled the microstructural evolution. A classical Hall-Petch relationship was exhibited between the yield stress and grain size. The residual stress depended on crystal orientation. The residual stress as-deposited was of tension and decreased with decreasing of (111) orientation. The ratio of texture coefficient of (111)/(220) can be used as a merit for the state of residual stress.

Identification of W20O58 Phase In CVD Tungsten Films

1989 ◽  
Vol 168 ◽  
Author(s):  
M. Lawrence ◽  
A. Dass ◽  
Siva Sivaram ◽  
Bryan Tracy
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Dissolved Oxygen ◽  
Oxide Phase ◽  
Matrix Phase ◽  
Second Phase ◽  
Two Phase

AbstractThin films of tungsten grown in a CVD reactor by the reduction of hydrogen and silane consisted of a two phase microstructures; a matrix phase of bcc tungsten, and a second phase of W20O58. The second phase is uniformly distributed in the film and does not afeoct 5athe electrical resistivity of hydrogenreduced films (8 μohm-cm). However, dissolved oxygen in the silane-reduced film contributes to the observed higher electrical resistivity (13 μohm-cm) along with smaller grain size. The larger amount of oxide in the hydrogen-reduced film correlates with its slower growth rate when compared to the silane-reduced film which contained a smaller amount of oxide phase.

X-Ray Measurement of Residual Stress Distribution in Sputtered Cu Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 1649-1654 ◽  
Author(s):  
Yoshiaki Akiniwa ◽  
Taku Sakaue
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Stress Distribution ◽  
Residual Stress Distribution ◽  
The Other ◽  
X Ray ◽  
Maximum Value ◽  
Other Hand ◽  
Target Power

Three kinds of copper thin films were fabricated by RF-magnetron sputtering. The target power was selected to be 10 and 150 W to change the properties of the films. Thin glass sheet was used as a substrate. For the target power of 150 W, the deposition time was selected to be 7 and 40 min. The thickness was 0.6 μm and 2.9 μm, and the grain size measured was 243 nm and 450 nm, respectively. The grain size of thicker film was larger than that of thinner one. On the other hand, for the target power of 10 W, the thickness and grain size were 2.4 μm and 54 nm, respectively. The grain size depends on the target power. The residual stress distribution in the films was measured by X-ray method. Several methods such as the grazing incidence X-ray diffraction method, the constant penetration depth method and the conventional sin2ψ method were adopted. The measured weighted average stress increased with increasing depth. After taking the maximum value at about 0.3 μm from the surface, the value decreased with increasing depth. The stress distribution near the surface in the films deposited at 150 W was almost identical irrespective of thickness. On the other hand, for the target power of 10 W, the stress distribution shifted to compression side. The reason could be explained by the effect of the thermal residual stress. The real stress distribution was estimated by using the optimization technique. The stress took the maximum value at 0.5 μm from the surface, and was compressive near the substrate. .

Structural Properties of CdTe Thin Films for Solar Cell Applications Deposited on Flexible Foil Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vasilios Palekis ◽  
Deidra Ranel Hodges ◽  
Don L Morel ◽  
Lee Stefanakos ◽  
Chris S Ferekides
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Solar Cells ◽  
Solar Cell ◽  
Substrate Temperature ◽  
Source Temperature ◽  
Cdte Solar Cells ◽  
Cdte Thin Films

AbstractCadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV and its high optical absorption coefficient. The typical CdTe thin film solar cell is of the superstrate configuration where a window layer (CdS), the absorber (CdTe), and a back contact are deposited onto a glass slide coated with a transparent electrode. Substrate CdTe solar cells where the above listed films are deposited in reverse order are not common. In this study, the growth of CdTe thin films deposited on foil substrates by the close-spaced sublimation (CSS) has been investigated for the purpose of fabricating substrate based CdTe solar cells. The CdTe films were deposited at substrate temperatures (TSUB) in the range of 300 to 600°C, and source temperatures (TSRC) in the 600 to 650°C range. The effect of the substrate-source temperature variations on the growth rate, film structure and morphology were studied using XRD and SEM. It was found that for low substrate temperature and as the growth rate increases, grain size was the same but the films appeared to be more uniform and more densely packed with less or no pinholes. The growth rate increased as the source temperature increased. The substrate temperature clearly influences the grain growth and the preferred orientation. As the substrate temperature increased the growth rate decreased and the grain size varied from 2 to 6 μm. XRD analysis showed that with the increase in substrate temperature film orientation changes from preferential along the (111) direction to a mix of (111) (220) and (311).

Effect of texture and grain size on the residual stress of nanocrystalline thin films

2017 ◽  
Vol 25 (7) ◽  
pp. 075004 ◽  
Author(s):  
Lei Cao ◽  
Arkaprabha Sengupta ◽  
Daniel Pantuso ◽  
Marisol Koslowski
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Nanocrystalline Thin Films

Effect of Different Oxygen Flow Rate on Physical Properties of ITO Thin Films Deposited by Ion-Assistant Electron Beam Evaporation

2014 ◽  
Vol 602-603 ◽  
pp. 1004-1008
Author(s):  
Yang Qiu ◽  
De Yi Meng ◽  
Yu Feng Chen ◽  
Chen Kui Zu
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Grain Size ◽  
Electron Beam ◽  
Flow Rate ◽  
Electron Beam Evaporation ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ito Thin Films

Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method, high purity ITO particles (In2O3: SnO2 = 9:1 Wt%) were used as source material. Properties such as microstructure, morphology and mechanical properties were investigated by X-ray diffractometer, SEM and scratch tester, respectively. Meanwhile, lattice constant a, crystal grain size and residual stress situation of films as-deposited were calculated and discussed in detail. The results indicated that all of the films as-deposited were polycrystalline and represented [111] preferential orientation. With the increasing of the oxygen flow rate, grain size and surface roughness of films as-deposited decreased, and inner stress remained in film increased. There were two types of failure mode occurred in ITO films according to different stress situation. Relative high level of residual stress improved the mechanical properties of ITO films in a certain extent.

Sign in / Sign up

Export Citation Format

Share Document