The Effect of Different Complexing Agents on the Properties of Zinc Sulfide Thin Films Deposited from Aqueous Solutions

2016 ◽  
Vol 10 (3) ◽  
pp. 317-323 ◽  
Author(s):  
Pavlo Shapoval ◽  
◽  
Martyn Sozanskyi ◽  
Iosyp Yatchyshyn ◽  
Bogdan Kulyk ◽  
...  

The zinc sulfide (ZnS) thin films were prepared on glass substrates by chemical bath deposition using the aqueous solutions of zinc chloride, thiourea, pH regulator and complexing agent (ammonia and hydrazine hydrate, trisodium citrate or sodium hydroxide). The calculations of boundary conditions for formation of zinc sulfide and zinc hydroxide were made at various zinc salt concentrations with different complexing agents. The structural, morphology and optical properties of the ZnS thin films were investigated. The thickness of ZnS films was measured and the recalculation of zinc mass per cm2 of the substrate surface was held for comparison. The deposition mechanism is discussed.

Author(s):  
P.O. Offor ◽  
S.N. Ude ◽  
G.M. Whyte ◽  
F.U. Otung ◽  
I.G. Madiba ◽  
...  

2008 ◽  
Vol 44 (2) ◽  
pp. 290-293 ◽  
Author(s):  
K. Anuar ◽  
Z. Zainal ◽  
N. Saravanan ◽  
N. Asikin

2008 ◽  
Vol 51 ◽  
pp. 125-130 ◽  
Author(s):  
Rong Fuh Louh ◽  
Warren Wu

Chemical bath deposition (CBD) is a fairly simple synthetic route to prepare II-VI semicondutive zinc sulfide thin films, which can be prepared on the flat surface of glass or silicon wafer substrates in the solution containing the precursors of zinc and sulfur ions in terms of ambient conditions of varying acidity. This study particularly aims at the growth dependence and optical property of ZnS thin films in the CBD process by different experiment parameters, whereas we intend to choose suitable types of zinc ionic precursors to be coupled with various CBD parameters such as reaction temperature and time, precursor concentration, types and complexing agents as well as post-deposition heat treatment conditions. Addition of different concentration of ethylenediamine, ammonium sulfate, sodium citrate and hydrazine in the CBD reaction process was used to control the adequate growth rate of ZnS thin films. As a consequence, the rapid thermal annealing was employed to enhance the film uniformity and thickness evenness, transmittance and the energy gap of ZnS samples. The results would lead to a potential application of buffer layer for the Cu (In,Ga)Se2 based thin film solar cells. The analytic instrument including SEM, AFM, UV-VIS were used to examine the CBD-derived nanosized ZnS buffer layers for the thin film solar cells. The ZnS thin films prepared by the chemical bath deposition in this study results in film thickness of 80 ~ 100 nm, high transmittance of 80~85% and the energy gap of 3.89 ~ 3.98 eV.


2017 ◽  
Vol 95 (5-8) ◽  
pp. 1849-1857 ◽  
Author(s):  
P. O. Offor ◽  
B. A. Okorie ◽  
C. D. Lokhande ◽  
P. S. Patil ◽  
F. I. Ezema ◽  
...  

Author(s):  
Anuar Kassim ◽  
Ho Soon Min ◽  
Lim Kian Siang ◽  
Saravanan Nagalingam

CuS thin films were deposited onto microscope glass substrates using the chemical bath deposition method in the presence of tartaric acid as a complexing agent. The objective of this paper was to study the influence of the deposition time on the morphology of thin films. The surface morphology of the thin films was investigated using atomic force microscopy. The thin films deposited for the shortest time were found to be   uniform,  without  cracks and with a dense  surface  morphology covering the entire substrate surface area. However, the films prepared for 60 min and above indicated incomplete coverage of the material over the substrate surface. The surface roughness and film thickness values that were observed depended mainly on the deposition time.  


2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
B. S. Pawar ◽  
S. M. Pawar ◽  
K. V. Gurav ◽  
S. W. Shin ◽  
J. Y. Lee ◽  
...  

The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited from a weak acidic medium (pH 4.50~5.00) onto Mo- coated and ITO-coated glass substrate by using single-step electrodeposition method. Trisodium citrate was used as a complexing agent. The effect of annealing atmospheres such as Ar, N2, N2+H2S on the structural, morphological, compositional, and optical properties of CZTS thin films has been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical absorption techniques, respectively. XRD studies reveal that the as-deposited CZTS film is amorphous in nature. Upon annealing in different atmospheres, a relatively more intense and sharper diffraction peaks (112), (200), (220), and (312) of kesterite crystal structure with uniform and densely packed surface morphology are observed in N2+H2S atmosphere. Absorption study shows that the band gap energy of as-deposited CZTS thin film is 2.8 eV whereas after annealing, it is found to be 1.48, 1.76, and 1.53 eV for Ar, N2, N2+H2S atmospheres.


2021 ◽  
Vol 2021 ◽  
pp. 1-6
Author(s):  
S. Abel ◽  
J. Leta Tesfaye ◽  
R. Kiran ◽  
T. Deepak ◽  
A. Usha Ruby ◽  
...  

Thin films of zinc sulfide (ZnS) with different concentrations of zinc acetate have been made by chemical bath deposition technique in acidic medium (pH = 5) on glass substrate using zinc acetate and sodium sulfide as sources of Zn+2 ion and S−2 ion, respectively, and ethylenediaminetetraacetate as complexing agents and sulfuric acid to adjust pH value at a constant deposition temperature of 85°C, and the deposition time of 90 minutes was used. The effect of the concentration of metallic precursor on the structural, morphological, and optical properties of chemical bath deposited zinc sulfide thin films was investigated in this study. The XRD result confirmed mixed phases of crystalline and amorphous structure dominating other phases, which is witnessed by larger crystallite size than other phases. It reveals that the thin films had hexagonal structure at the medium concentration with preferred orientation along (111) plane, and at lower and higher concentration, it showed that film has an amorphous structure in nature. The crystallinity of all the phases significantly enlarged with increasing the zinc precursor concentration. The SEM micrographs showed high-pitched edged irregular-shaped grains covering the substrate with pinholes and bangs. The optical properties investigated by the UV-VIS spectrometer specified a decrease in the optical bandgap of the films between 3.5 eV and 2.6 eV as the zinc acetate concentration in the solution increased from 0.1 to 0.2 M. It showed that the zinc sulfide had high absorption in the UV radiation. The main finding of this paper is that metallic precursor concentration has a significant role in the optical, morphological, and microstructural properties of the cobalt sulfide thin films, which are most suitable for photovoltaic applications.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).


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