Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND Flash Memories

2019 ◽  
Author(s):  
Changbeom Woo ◽  
Myeongwon Lee ◽  
Shinkeun Kim ◽  
Jaeyeol Park ◽  
Gil-Bok Choi ◽  
...  
Keyword(s):  
Nand Flash ◽  
Short Term ◽  
Flash Memories ◽  
Term Retention ◽  
Charge Loss ◽  
Loss Mechanisms

Separation of Lateral Migration Components by Hole During the Short-Term Retention Operation in 3-D NAND Flash Memories

2020 ◽  
Vol 67 (6) ◽  
pp. 2645-2647 ◽  
Author(s):  
Shinkeun Kim ◽  
Haesoo Kim ◽  
Changbeom Woo ◽  
Gil-Bok Choi ◽  
Moon-Sik Seo ◽  
...  
Keyword(s):  
Nand Flash ◽  
Lateral Migration ◽  
Short Term ◽  
Flash Memories ◽  
Term Retention

Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories

2020 ◽  
Vol 67 (12) ◽  
pp. 5472-5478
Author(s):  
Shinkeun Kim ◽  
Kyunghwan Lee ◽  
Changbeom Woo ◽  
Yuchul Hwang ◽  
Hyungcheol Shin
Keyword(s):  
Failure Mechanisms ◽  
Nand Flash ◽  
Flash Memories ◽  
Term Retention ◽  
Long Term Retention

Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories

2019 ◽  
Vol 6 (3) ◽  
pp. 807-843
Author(s):  
Giorgio Cellere ◽  
Andrea Cester ◽  
Alessandro Paccagnella
Keyword(s):  
Floating Gate ◽  
Flash Memories ◽  
Charge Loss ◽  
Radiation Induced ◽  
Induced Charge ◽  
Loss Mechanisms

scholarly journals Reliability prediction for Flash memories Retention failure by charge loss

2020 ◽  
Author(s):  
Zaci Cohen
Keyword(s):  
High Temperature ◽  
Memory Storage ◽  
Nand Flash ◽  
Cell Array ◽  
Data Retention ◽  
Case Scenario ◽  
Flash Memories ◽  
Worst Case ◽  
Charge Loss ◽  
Verification Process

<p>This article represents a new method for Data Retention failure (DR) in NAND Flash memories by analyzing the <b>charge leakage</b> phenomena. Retention failure accrue when stored data changes its level. This usually happens at and because of a high temperature environment that accelerate leakage.</p> <p>The amount of electron charge in the cell is rather hard to calculate. However, we know that a verification process done at the end of the programming with respect to the amount of charge, is apparently enough to indicate the proper logical level. Moreover, when the cell is exposed to high temperature the charge leaks out but the manufacturer`s guarantee that the memory storage will withstand the JEDS218 standard, this mean that this amount of charge should be enough for 10 years at temperature ambient range of 25÷55°C. Hence, after 10 years, in the worst-case scenario, the amount of charge might be so low that its results can adversely affect its logical level.</p> <p>In our previous work, we found that the programed cell array affected by temperature as shown in figure 1, begin with the average voltage is equal to V<sub>t1</sub> and later, when the leakage occurs, the average voltage decreases while the variation increases.</p>

scholarly journals Reliability prediction for Flash memories Retention failure by charge loss

2020 ◽  
Author(s):  
Zaci Cohen
Keyword(s):  
High Temperature ◽  
Memory Storage ◽  
Nand Flash ◽  
Cell Array ◽  
Data Retention ◽  
Case Scenario ◽  
Flash Memories ◽  
Worst Case ◽  
Charge Loss ◽  
Verification Process

<p>This article represents a new method for Data Retention failure (DR) in NAND Flash memories by analyzing the <b>charge leakage</b> phenomena. Retention failure accrue when stored data changes its level. This usually happens at and because of a high temperature environment that accelerate leakage.</p> <p>The amount of electron charge in the cell is rather hard to calculate. However, we know that a verification process done at the end of the programming with respect to the amount of charge, is apparently enough to indicate the proper logical level. Moreover, when the cell is exposed to high temperature the charge leaks out but the manufacturer`s guarantee that the memory storage will withstand the JEDS218 standard, this mean that this amount of charge should be enough for 10 years at temperature ambient range of 25÷55°C. Hence, after 10 years, in the worst-case scenario, the amount of charge might be so low that its results can adversely affect its logical level.</p> <p>In our previous work, we found that the programed cell array affected by temperature as shown in figure 1, begin with the average voltage is equal to V<sub>t1</sub> and later, when the leakage occurs, the average voltage decreases while the variation increases.</p>

A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
S. Gerardin ◽  
M. Bagatin ◽  
A. Paccagnella ◽  
S. Beltrami ◽  
A. Costantino ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Nand Flash ◽  
Flash Memories ◽  
Beam Monitor ◽  
Heavy Ion Beam
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