Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide

2017 ◽  
Author(s):  
Vito Simonka ◽  
Andreas Hossinger ◽  
Josef Weinbub ◽  
Siegfried Selberherr
Keyword(s):  
Silicon Carbide ◽  
Electrical Activation ◽  
Nitrogen Doped ◽  
Doped Silicon

Electronic Raman Studies of Shallow Donors in Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 579-584 ◽  
Author(s):  
Roland Püsche ◽  
Martin Hundhausen ◽  
Lothar Ley ◽  
Kurt Semmelroth ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
Ground State ◽  
Electronic Transitions ◽  
Nitrogen And Phosphorus ◽  
Nitrogen Doped ◽  
Electronic Raman Scattering ◽  
Doped Silicon ◽  
Donor States ◽  
Increasing Temperature

We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7K < T < 300K. We observe a series of peaks in the Raman spectra which we assign to electronic transitions at nitrogen and phosphorus donors on different lattice sites. These transitions are identified as valley orbit transitions of the 1s donor ground state. From the polarization dependence of the observed peaks, we find that all electronic Raman signals have E2-symmetry of C6v for the hexagonal polytypes (6H-SiC and 4H-SiC) and E-symmetry of C3v for 15R-SiC. We find a reduction of the intensities of all valley-orbit Raman signals with increasing temperature and ascribe this reduction to the decreasing occupation of donor states.

scholarly journals First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes

2009 ◽  
Vol 58 (7) ◽  
pp. 4883
Author(s):  
Song Jiu-Xu ◽  
Yang Yin-Tang ◽  
Liu Hong-Xia ◽  
Zhang Zhi-Yong
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Nitrogen Doped ◽  
First Principles Study ◽  
Silicon Carbide Nanotubes ◽  
Doped Silicon

Mechanical Testing of Flexible Silicon Carbide Interconnect Ribbons

2006 ◽  
Vol 527-529 ◽  
pp. 1107-1110
Author(s):  
R. Panday ◽  
Xiao An Fu ◽  
Srihari Rajgopal ◽  
T. Lisby ◽  
S.A. Nikles ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Prior Work ◽  
Curved Beams ◽  
Neural Probes ◽  
Nitrogen Doped ◽  
Doped Silicon ◽  
Superior Mechanical Properties ◽  
Simulation Results ◽  
Sic Films

This paper explores polycrystalline 3C-silicon carbide (poly-SiC) deposited by LPCVD for fabricating flexible ribbon cable interconnects for micromachined neural probes. While doped silicon is used currently, we hypothesized that poly-SiC will provide enhanced mechanical robustness due to SiC’s superior mechanical properties. Paralleling prior work in silicon, forty-two different designs were fabricated from nitrogen-doped poly-SiC films deposited by LPCVD at 900°C using dichlorosilane and acetylene as precursors. The different designs were then tested in bending and twisting modes. Curved beams were found to bend nearly 250% more than straight beams before fracture. Longer beams withstood greater bending and twisting due to greater compliance. Longer and narrower beams generally outperformed shorter beams irrespective of design. Also, doped poly-SiC beams had, on average, breaking angles that were greater than those of identical doped silicon beams by ~50% in bending and ~20% in twisting modes. The paper details the designs studied, describes the fabrication process for the test structures and compares/contrasts the testing and simulation results related to the different designs to identify best design practices.

Catalytic methane combustion over iron/nitrogen-doped silicon carbide

RSC Advances ◽  
2016 ◽  
Vol 6 (88) ◽  
pp. 85559-85563 ◽  
Author(s):  
Hiroyuki Koshikawa ◽  
Shuji Nakanishi ◽  
Kazuhito Hashimoto ◽  
Kazuhide Kamiya
Keyword(s):  
Silicon Carbide ◽  
Catalytic Combustion ◽  
Methane Combustion ◽  
Nitrogen Doped ◽  
Doped Silicon ◽  
Catalytic Combustion Of Methane

We report that the catalytic combustion of methane was accelerated over iron and nitrogen-modified silicon carbide.

Finite Temperature Behavior of Carbon Atom Doped Silicon Clusters: Depressed Thermal Stabilities, Co-existing isomers, Reversible Dynamical Pathways and Fragmentation Channels

2021 ◽  
Author(s):  
Krati Joshi ◽  
Ashakiran Maibam ◽  
Sailaja Krishnamurty
Keyword(s):  
Silicon Carbide ◽  
Carbon Atom ◽  
Finite Temperature ◽  
Asymptotic Giant Branch ◽  
Temperature Behavior ◽  
Asymptotic Giant Branch Stars ◽  
Silicon Clusters ◽  
Thermal Stabilities ◽  
Doped Silicon ◽  
Giant Branch Stars

Silicon carbide clusters are significant due to their predominant occurrence in meteoric star dust, particularly in carbon rich asymptotic giant branch stars. Of late, they have also been recognized as...

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