scholarly journals Modelling and control of oxygen partial pressure in an underwater breathing apparatus with gas recycle

2003 ◽  
Author(s):  
Franco Garofalo ◽  
Sabato Manfredi ◽  
Stefania Santini
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Breathing Apparatus ◽  
And Control

Space Shuttle Orbiter Oxygen Partial Pressure Sensing and Control System Improvements

1992 ◽  
Author(s):  
Robert F. Frampton ◽  
Dennis M. Hoy ◽  
Kevin J. Kelly ◽  
James J. Walleshauser
Keyword(s):  
Control System ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Space Shuttle ◽  
Pressure Sensing ◽  
And Control

Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM

2013 ◽  
Vol 1507 ◽  
Author(s):  
Neeraj Panwar ◽  
Gurudatt Rao ◽  
N. Ravi Chandra Raju ◽  
Rajashree Nori ◽  
Pankaj Kumbhare ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Memory Performance ◽  
Deposition Process ◽  
Budget Process ◽  
Thermal Budget ◽  
Bipolar Switching ◽  
Budget Reduction ◽  
Low Thermal Budget ◽  
And Control

ABSTRACTA low thermal budget process for back-end compatible PCMO based RRAM cell is essential for 3D stacked memory. In this paper, we investigate two strategies to engineer low thermal budget processing for bipolar switching - (i) deposition engineering i.e. based on deposition temperature and oxygen partial pressure, (ii) post deposition anneal i.e. based on inert anneal of room temperature deposited PCMO film.. We demonstrate that both deposition and anneal shows a transition temperature above which bipolar switching is realized. Oxygen partial pressure is a key deposition process parameter. As oxygen partial pressure is reduced memory window increases, however beyond an optimal O2 partial pressure, unipolar switching is observed. Inert anneal is more effective in thermal budget reduction as N2/550°C/2min anneal has same memory performance as 650°C/2hour deposition process.

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