scholarly journals Brief review of silver sinter-bonding processing for packaging high-temperature power devices

2020 ◽  
Vol 6 (3) ◽  
pp. 25-34
Author(s):  
Haidong Yan ◽  
Peijie Liang ◽  
Yunhui Mei ◽  
Zhihong Feng
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Silver Sinter ◽  
Sinter Bonding

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

LTCC Embedding of SiC Power Devices for High Temperature Applications over 400 °C

2020 ◽  
Author(s):  
Benjamin Bayer ◽  
Mario Groccia ◽  
Hoang Linh Bach ◽  
Christoph Friedrich Bayer ◽  
Andreas Schletz ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Temperature Applications

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

2013 ◽  
Vol 1538 ◽  
pp. 329-333 ◽  
Author(s):  
Lin Cheng ◽  
Michael J. O’Loughlin ◽  
Alexander V. Suvorov ◽  
Edward R. Van Brunt ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Power Devices ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Oxidation Step ◽  
High Temperature Anneal ◽  
Lifetime Enhancement

ABSTRACTThis paper details the development of a technique to improve the minority carrier lifetime of 4H-SiC thick (≥ 100 μm) n-type epitaxial layers through multiple thermal oxidations. A steady improvement in lifetime is seen with each oxidation step, improving from a starting ambipolar carrier lifetime of 1.09 µs to 11.2 µs after 4 oxidation steps and a high-temperature anneal. This multiple-oxidation lifetime enhancement technique is compared to a single high-temperature oxidation step, and a carbon implantation followed by a high-temperature anneal, which are traditional ways to achieve high ambipolar lifetime in 4H-SiC n-type epilayers. The multiple oxidation treatment resulted in a high minimum carrier lifetime of 6 µs, compared to < 2 µs for other treatments. The implications of lifetime enhancement to high-voltage/high-current 4H-SiC power devices are also discussed.

Effect of Ag Sintered Bondline Thickness on High Temperature Reliability of SiC Power Devices

2021 ◽  
pp. 1-1
Author(s):  
Zhongyang Deng ◽  
Guisheng Zou ◽  
Qiang Jia ◽  
Bin Feng ◽  
Hongqiang Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Bondline Thickness

Effect of High Temperature Ageing on Active and Passive Power Devices

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000228-000235
Author(s):  
Cyril Buttay ◽  
Remi Robutel ◽  
Christian Martin ◽  
Christophe Raynaud ◽  
Simeon Dampieni ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Magnetic Materials ◽  
Power Converter ◽  
Power Devices ◽  
Active Devices ◽  
Passive Power ◽  
Temperature Ageing

The power devices needed to build a high-temperature converter (inductors, capacitors and active devices) have been stored at 200°C for up to 1000 hrs. Their characteristics have been monitored. Capacitors and magnetic materials from various manufacturers and technologies are tested, as well as silicon-carbide diodes. It is shown that by carefully choosing the components, it is possible to build a reliable power converter operating at high temperature.

Evaluation of Low Cost, High Temperature Die and Substrate Attach Materials for Silicon Carbide (SiC) Power Modules

2018 ◽  
Vol 2018 (1) ◽  
pp. 000317-000325
Author(s):  
Sayan Seal ◽  
Brandon Passmore ◽  
Brice McPherson
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Operating Conditions ◽  
Acoustic Microscopy ◽  
Switching Frequency ◽  
Power Devices ◽  
Formidable Challenge ◽  
Die Attach ◽  
Power Modules ◽  
High Switching Frequency

Abstract The performance of SiC power devices has demonstrated superior characteristics as compared to conventional Silicon (Si) devices. Some of the advantages of SiC power devices over Si include higher voltage blocking capability, low specific on-resistance, high switching frequency, high temperature operation, and high power density. Thus, SiC modules are capable of processing significant levels of power within much smaller volumes compared with its Si counterparts. These high thermal loads present a formidable challenge in integrating SiC devices in power modules. For example, known-good materials and processes for silicon power modules are not rated at the aggressive operating conditions associated with SiC devices. Two of the most critical interfaces in a power electronics module are the die-attach and substrate- attach. A degradation in these interfaces often results in potentially catastrophic electrical and thermal failure. Therefore, it is very important to thoroughly evaluate die-attach materials before implementing them in SiC power modules. This paper presents the methodology for the evaluation of die attach materials for SiC power modules. Preforms of a lead-free high-temperature attach material were used to perform a die and substrate attach process on a conventional power module platform. The initial attach quality was inspected using non- destructive methods consisting of acoustic microscopy and x-ray scanning. Die attach and substrate attach voiding of &lt; 5% was obtained indicating a very good attach quality. Cross-sectioning techniques were used to validate the inspection methods. The initial attach strength was measured using pull tests and shear tests. The measurements were repeated at the rated temperature of the module to ensure that the properties did not degrade excessively at the service temperature. At the rated module temperature of 175 °C, the die bonding strength was found to be ~ 75 kg. This was only 25% lower than the strength at room temperature. In addition, the contact pull strength was measured to be &gt; 90 kg at 175 °C, which was 25% lower than the value measured at room temperature. The effect of power cycling and thermal cycling on the quality and strength of the die and substrate attach layers was also investigated.

Precise Chip Joint Method with Sub-micron Au Particle for High-density SiC Power Module Operating at High Temperature

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000254-000259 ◽  
Author(s):  
Fumiki Kato ◽  
Fengqun Lang ◽  
Simanjorang Rejeki ◽  
Hiroshi Nakagawa ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Flip Chip ◽  
Stress Test ◽  
High Density ◽  
Cathode Side ◽  
Module Structure ◽  
Power Devices ◽  
Power Module ◽  
Joint Method

In this work, a novel precise chip joint method using sub-micron Au particle for high-density silicon carbide (SiC) power module operating at high temperature is proposed. A module structure of SiC power devices are sandwiched between two silicon nitride-active metal brazed copper (SiN-AMC) circuit boards. To make a precise position and height control of the chip bonding, the top side (gate/source or anode pad side) of SiC power devices are flip-chip bonded to circuit electrodes using sub-micron Au particle with low temperature (250°C) and pressure-less sintering. The accuracy of the bonding position of chips was less than 10 μm and the accuracy of the height after bonding chips was less than 15 μm. Mechanical shear fatigue tests for flip-chip bonded SiC Schottky barrier diode (SBD) were carried out. As a result, initial shear strength of the joint was 36 MPa. The shear strength of 43 MPa is obtained after storage life test (500 hours at 250°C), and also 35 MPa is obtained even after thermal cycle stress test (1000 cycles between −40°C and 250°C). The flip-chip bonding of SiC-JFET is successfully realizedon the substrate without short or open failure electrically. Finally we joint the backside of the SiC-JFET (drain side) and the SiC-SBD (cathode side) to each circuit electrodes at once by means of reflow process with Au-12%Ge solder. The structured sandwich SiC power module was also successfully formed.

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

2014 ◽  
Vol 778-780 ◽  
pp. 1122-1125 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Nicolas Thierry-Jebali ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
High Temperature ◽  
Cryogenic Temperature ◽  
Good Choice ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.

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