Regional Policy: Past Experience and New Directions.

1980 ◽  
Vol 90 (357) ◽  
pp. 178
Author(s):  
John Rhodes ◽  
Duncan MacClennan ◽  
John B. Parr
Keyword(s):  
Regional Policy ◽  
Past Experience ◽  
New Directions

Above and beyond the content: Feelings influence mental simulations

2020 ◽  
Vol 43 ◽  
Author(s):  
Kellen Mrkva ◽  
Luca Cian ◽  
Leaf Van Boven
Keyword(s):  
Mental Representation ◽  
Mental Simulation ◽  
Past Experience ◽  
Prediction Errors

Abstract Gilead et al. present a rich account of abstraction. Though the account describes several elements which influence mental representation, it is worth also delineating how feelings, such as fluency and emotion, influence mental simulation. Additionally, though past experience can sometimes make simulations more accurate and worthwhile (as Gilead et al. suggest), many systematic prediction errors persist despite substantial experience.

Sociocultural memory development research drives new directions in gadgetry science

2019 ◽  
Vol 42 ◽  
Author(s):  
Penny Van Bergen ◽  
John Sutton
Keyword(s):  
Episodic Memory ◽  
Autobiographical Memory ◽  
Developmental Psychology ◽  
Cross Cultural ◽  
Memory Development ◽  
Development Research ◽  
Cultural Research ◽  
New Directions ◽  
Cross Cultural Research

Abstract Sociocultural developmental psychology can drive new directions in gadgetry science. We use autobiographical memory, a compound capacity incorporating episodic memory, as a case study. Autobiographical memory emerges late in development, supported by interactions with parents. Intervention research highlights the causal influence of these interactions, whereas cross-cultural research demonstrates culturally determined diversity. Different patterns of inheritance are discussed.

Statistics and parallaxes

1978 ◽  
Vol 48 ◽  
pp. 7-29
Author(s):  
T. E. Lutz
Keyword(s):  
Experimental Design ◽  
Statistical Methods ◽  
Review Paper ◽  
Systematic Errors ◽  
Past Experience ◽  
Random Errors ◽  
Trigonometric Parallaxes ◽  
Systematic And Random Errors

This review paper deals with the use of statistical methods to evaluate systematic and random errors associated with trigonometric parallaxes. First, systematic errors which arise when using trigonometric parallaxes to calibrate luminosity systems are discussed. Next, determination of the external errors of parallax measurement are reviewed. Observatory corrections are discussed. Schilt’s point, that as the causes of these systematic differences between observatories are not known the computed corrections can not be applied appropriately, is emphasized. However, modern parallax work is sufficiently accurate that it is necessary to determine observatory corrections if full use is to be made of the potential precision of the data. To this end, it is suggested that a prior experimental design is required. Past experience has shown that accidental overlap of observing programs will not suffice to determine observatory corrections which are meaningful.

Life Beyond 1MeV

1980 ◽  
Vol 38 ◽  
pp. 30-33
Author(s):  
K.H. Westmacott
Keyword(s):  
Electron Microscopy ◽  
Past Experience ◽  
The Other ◽  
Good Case ◽  
Other Hand ◽  
The U.S

Life beyond 1MeV – like life after 40 – is not too different unless one takes advantage of past experience and is receptive to new opportunities. At first glance, the returns on performing electron microscopy at voltages greater than 1MeV diminish rather rapidly as the curves which describe the well-known advantages of HVEM often tend towards saturation. However, in a country with a significant HVEM capability, a good case can be made for investing in instruments with a range of maximum accelerating voltages. In this regard, the 1.5MeV KRATOS HVEM being installed in Berkeley will complement the other 650KeV, 1MeV, and 1.2MeV instruments currently operating in the U.S. One other consideration suggests that 1.5MeV is an optimum voltage machine – Its additional advantages may be purchased for not much more than a 1MeV instrument. On the other hand, the 3MeV HVEM's which seem to be operated at 2MeV maximum, are much more expensive.

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