X‐ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

1996 ◽  
Vol 69 (8) ◽  
pp. 1134-1136 ◽  
Author(s):  
J. A. Dura ◽  
J. G. Pellegrino ◽  
C. A. Richter
Keyword(s):  
Transport Properties ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Interface Roughness ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

2010 ◽  
Vol 96 (9) ◽  
pp. 092110 ◽  
Author(s):  
Markus Hofstetter ◽  
John Howgate ◽  
Ian D. Sharp ◽  
Maren Funk ◽  
Martin Stutzmann ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

2013 ◽  
Vol 805-806 ◽  
pp. 1027-1030 ◽  
Author(s):  
Da Qing Peng ◽  
Xun Dong ◽  
Zhong Hui Li ◽  
Dong Guo Zhang ◽  
Liang Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
2Deg Density

AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm2/V·s with low sheet resistance of 342Ω/ was obtained with In composition 0.19.

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