scholarly journals TEM and FESEM investigation of Lanthanum nickelate thin films obtained by chemical solution deposition

2012 ◽  
Vol 6 (2) ◽  
pp. 103-107
Author(s):  
Milica Pocuca-Nesic ◽  
Goran Brankovic ◽  
Slavko Bernik ◽  
Aleksander Recnik ◽  
Dana Vasiljevic-Radovic ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Layer ◽  
Perovskite Oxide ◽  
Complex Method ◽  
Oxide Material ◽  
Oriented Growth ◽  
Solution Deposition ◽  
Si Substrates ◽  
Substrate Side ◽  
Lanthanum Nickelate

Lanthanum nickelate (LNO) is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2. Deposited layers were thermally treated from the substrate side with low heating rate (1?/min) up to 700?C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm), dense, crack-free and with large square-shaped grains (170 nm). According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO.

Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers

2002 ◽  
Vol 748 ◽  
Author(s):  
Dinghua Bao ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Ferroelectric Properties ◽  
Bottom Layer ◽  
Chemical Solution ◽  
Oriented Growth ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Lanthanum Titanate

ABSTRACT(Bi,La)4Ti3O12 (BLT) thin films with various Bi2O3 template layers were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Both of the BLT films with a thin Bi2O3 template layer and those without a Bi2O3 layer had a highly c-axis oriented growth, while both of the BLT films with a thin Bi2O3 bottom layer and those with a Bi2O3 intermediate layer were highly c-axis oriented. It was found that the use of Bi2O3 template layers improved significantly the ferroelectric properties of BLT thin films. In addition, the thin films with a thin Bi2O3 template layer showed good dielectric properties. All the capacitors with Bi2O3 template layers showed high polarization fatigue resistance and good retention properties.

Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

2021 ◽  
Vol 21 (4) ◽  
pp. 2681-2686
Author(s):  
Nguyen Ngoc Minh ◽  
Bui Van Dan ◽  
Nguyen Duc Minh ◽  
Guus Rijnders ◽  
Ngo Duc Quan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Chemical Solution ◽  
Ferroelectric Films ◽  
Solution Deposition ◽  
Si Substrates ◽  
Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

BiFeO3(00l)/LaNiO3/Si thin films with enhanced polarization: an all-solution approach

RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78629-78635 ◽  
Author(s):  
Linghua Jin ◽  
Xianwu Tang ◽  
Renhuai Wei ◽  
Bingbing Yang ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Solution Approach ◽  
Si Substrates ◽  
Multiferroic Bifeo

Multiferroic BiFeO3 (BFO) thin films with a thickness larger than 400 nm are grown on solution-derived LaNiO3 coated Si substrates via chemical solution deposition.

Real-time x-ray scattering study of sputter-deposited LaNiO3 thin films on Si substrates

1999 ◽  
Vol 569 ◽  
Author(s):  
Hsin-Yi Lee ◽  
Chih-Hao Lee ◽  
Keng S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Sputtering Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Plane Normal ◽  
Integrated Intensities

ABSTRACTReal-time x-ray reflectivity and diffraction measurements under in-situ sputtering deposition conditions were performed to study the crystallization behavior of LaNiO3thin films on Si substrate. We found that an amorphous layer of 60 Å was grown in the first 6 min of the deposition and subsequently a polycrystalline overlayer was developed as observed from the in-situ x-ray reflectivity curves and diffraction patterns. Polycrystalline columnar textures of (110) and (100) were grown on the top of this amorphous film. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that the ability of (100)-texturization enhanced with increasing film thickness over a certain critical value.

scholarly journals Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

2020 ◽  
Vol 8 (15) ◽  
pp. 5102-5111
Author(s):  
Nikolai Helth Gaukås ◽  
Julia Glaum ◽  
Mari-Ann Einarsrud ◽  
Tor Grande
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Co Doped

Doped K0.5Na0.5NbO3 films with good ferroelectric and dielectric properties were prepared by aqueous chemical solution deposition on platinized Si substrates.

SrAl12O19 thin films by chemical solution deposition and their use as buffer layers for oriented growth of hexagonal ferrites

2016 ◽  
Vol 616 ◽  
pp. 228-237
Author(s):  
Josef Buršík ◽  
Róbert Uhrecký ◽  
Dorota Kaščáková ◽  
Radomír Kužel ◽  
Václav Holý ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Hexagonal Ferrites ◽  
Oriented Growth ◽  
Solution Deposition

Preparation of SrMoO4 thin films on Si substrates by chemical solution deposition

2008 ◽  
Vol 310 (4) ◽  
pp. 789-793 ◽  
Author(s):  
Hechang Lei ◽  
Xuebin Zhu ◽  
Yuping Sun ◽  
Wenhai Song
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS

2008 ◽  
Vol 15 (06) ◽  
pp. 799-803 ◽  
Author(s):  
XIANGYANG JING ◽  
BAIBIAO HUANG ◽  
SHUSHAN YAO ◽  
QI ZHANG ◽  
ZEYAN WANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Structural And Electrical Properties ◽  
Ce Substitution ◽  
P Type ◽  
Insulating Properties

Ce -doped Bi 2 Ti 2 O 7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce -doped Bi 2 Ti 2 O 7 was more stable than that of Bi 2 Ti 2 O 7 without Ce substitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films could be used as storage capacitors in DRAM and MOS.

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