scholarly journals Introducing a novel high-efficiency arc less heterounction DJ solar cell

2018 ◽  
Vol 31 (1) ◽  
pp. 89-100
Author(s):  
Sobhan Abasian ◽  
Reza Sabbaghi-Nadooshan
Keyword(s):  
Solar Cell ◽  
Lattice Constant ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Hole Mobility ◽  
Short Circuit Current ◽  
Open Circuit ◽  
High Electron

The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ?? group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al0.52In0.48P, GaAs and In0.49Ga0.51P), it was concluded that the semiconductor Al0.52In0.48P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (JSC) = 22.96 mA/cm2, open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(?)= 58.28% were obtained under AM1.5 (1 sun) of radiation.

scholarly journals A High Efficiency Chlorophyll Sensitized Solar Cell with Quasi Solid PVA Based Electrolyte

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
H. C. Hassan ◽  
Z. H. Z. Abidin ◽  
F. I. Chowdhury ◽  
A. K. Arof
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Double Salt ◽  
Sensitized Solar Cells

The objective of this work is to investigate the performance of chlorophyll sensitized solar cells (CSSCs) with gel electrolyte based on polyvinyl alcohol (PVA) with single iodide salt (potassium iodide (KI)) and double salt (KI and tetrapropylammonium iodide (TPAI)). Chlorophyll was extracted from the bryophyteHyophila involuta. The CSSC with electrolyte containing only KI salt produced a short circuit current density (Jsc) of 4.59 mA cm−2, open circuit voltage (Voc) of 0.61 V, fill factor (FF) of 0.64, and efficiency (η) of 1.77%. However, the CSSC with double salt electrolyte exhibitedJscof 5.96 mA cm−2,Vocof 0.58 V, fill factor FF of 0.58, andηof 2.00%. Since CSSC with double salt electrolyte showed better efficiency, other cells fabricated will use the double salt electrolyte. On addition of 0.7 M tetrabutyl pyridine (TBP) to the double salt electrolyte, the cell’s efficiency increased to 2.17%,Jsc=5.37 mA cm−2,Voc=0.55 V, and FF = 0.73. With 5 mM chenodeoxycholic acid (CDCA) added to the chlorophyll, the light to electricity efficiency increased to 2.62% withJscof 8.44 mA cm−2,Vocof 0.54 V, and FF of 0.58.

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

scholarly journals Promising Shadow Masking Technique for the Deposition of High-Efficiency Amorphous Silicon Solar Cells Using Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 6 ◽  
Author(s):  
Kawtar Belrhiti Alaoui ◽  
Saida Laalioui ◽  
Badr Ikken ◽  
Abdelkader Outzourhit
Keyword(s):  
Refractive Index ◽  
Vapor Deposition ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

In this work, a detailed description of the various steps involved in the fabrication of high-efficiency hydrogenated amorphous-silicon cells using plasma-enhanced chemical vapor deposition, and a novel shadow masking technique is presented. The influence of the different masking methods on the cell parameters was experimentally investigated. Particularly, the short-circuit current density (Jsc), the fill factor, the open circuit voltage (Voc), and the resistive losses indicated by the shunt (Rsh) and series (Rs) resistances were measured in order to assess the performance of the cells as a function of the masks used during the cell fabrication process. The results indicate that the use of a masking technique where the p-i-n structure was first deposited over the whole surface of a 20 cm2 × 20 cm2 substrate, followed by the deposition, deposits the back contact through a metal mask, and by the ultrasonic soldering of indium to access the front contact is a good alternative to laser scribing in the laboratory scale. Indeed, a record efficiency of 8.8%, with a short-circuit current density (Jsc) of 15.6 mA/cm2, an open-circuit voltage (Voc) of 0.8 V, and a fill factor of 66.07% and low resistive losses were obtained by this technique. Furthermore, a spectroscopic ellipsometry investigation of the uniformity of the film properties (thickness, band gap, and refractive index) on large-area substrates, which is crucial to mini-module fabrication on a single substrate and for heterojunction development, was performed using the optimal cell deposition recipes. It was found that the relative variations of the band gap, thickness, and refractive index n are less than 1% suggesting that the samples are uniform over the 20 cm2 × 20 cm2 substrate area used in this work.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

scholarly journals Damp-Heat Induced Performance Degradation for InGaP/GaAs/Ge Triple-Junction Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.

scholarly journals The absorber and buffer layer thicknesses for CdTe/CdS based thin film solar cell efficiency at various operational temperatures

2021 ◽  
Vol 24 (1) ◽  
pp. 70
Author(s):  
Omar Ghanim Ghazal ◽  
Ahmed Waleed Kasim ◽  
Nabeel Zuhair Tawfeeq
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Structural Parameters ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Window Layer ◽  
The Impact

Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

scholarly journals Fabrication of Affordable and Sustainable Solar Cells Using NiO/TiO2 P-N Heterojunction

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Kingsley O. Ukoba ◽  
Freddie L. Inambao ◽  
Andrew C. Eloka-Eboka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Spray Pyrolysis Technique ◽  
Low Cost ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Heterojunction Solar Cells

The need for affordable, clean, efficient, and sustainable solar cells informed this study. Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. The fabricated solar cells exhibit a short-circuit current of 16.8 mA, open-circuit voltage of 350 mV, fill factor of 0.39, and conversion efficiency of 2.30% under 100 mW/cm2 illumination. This study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides.

A Heterojunction Film Solar Cell of Glass/ITO/CdS/PbS/Al

2012 ◽  
Vol 569 ◽  
pp. 176-179
Author(s):  
Peng Wang ◽  
Li Bo Fan ◽  
Li Juan Sun ◽  
Zhen Hua Zhang ◽  
Xin Bing Zhu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Near Infrared ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
High Energy ◽  
Open Circuit ◽  
Special Treatment ◽  
Cds Film

A film solar cell was made with a structure of Glass/ITO/CdS/PbS/Al. CdS film was obtained by thermal evaporation. PbS film was prepared by a simple solid-solid reaction. The solar cells are photosensitive in a large spectral range (extending from near infrared to high energy side regions). The cell with the area of 0.15 cm2 without any special treatment has shown the values of open-circuit voltage (Voc) of 138 mV and short circuit current (Jsc) of 0.01 mA/cm2 with the efficiency of 0.33 % and the fill factor (FF) is 0.26 under illumination intensity of 100 mW/cm2.

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