scholarly journals A High Efficiency Chlorophyll Sensitized Solar Cell with Quasi Solid PVA Based Electrolyte

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
H. C. Hassan ◽  
Z. H. Z. Abidin ◽  
F. I. Chowdhury ◽  
A. K. Arof
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Double Salt ◽  
Sensitized Solar Cells

The objective of this work is to investigate the performance of chlorophyll sensitized solar cells (CSSCs) with gel electrolyte based on polyvinyl alcohol (PVA) with single iodide salt (potassium iodide (KI)) and double salt (KI and tetrapropylammonium iodide (TPAI)). Chlorophyll was extracted from the bryophyteHyophila involuta. The CSSC with electrolyte containing only KI salt produced a short circuit current density (Jsc) of 4.59 mA cm−2, open circuit voltage (Voc) of 0.61 V, fill factor (FF) of 0.64, and efficiency (η) of 1.77%. However, the CSSC with double salt electrolyte exhibitedJscof 5.96 mA cm−2,Vocof 0.58 V, fill factor FF of 0.58, andηof 2.00%. Since CSSC with double salt electrolyte showed better efficiency, other cells fabricated will use the double salt electrolyte. On addition of 0.7 M tetrabutyl pyridine (TBP) to the double salt electrolyte, the cell’s efficiency increased to 2.17%,Jsc=5.37 mA cm−2,Voc=0.55 V, and FF = 0.73. With 5 mM chenodeoxycholic acid (CDCA) added to the chlorophyll, the light to electricity efficiency increased to 2.62% withJscof 8.44 mA cm−2,Vocof 0.54 V, and FF of 0.58.

scholarly journals Promising Shadow Masking Technique for the Deposition of High-Efficiency Amorphous Silicon Solar Cells Using Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 6 ◽  
Author(s):  
Kawtar Belrhiti Alaoui ◽  
Saida Laalioui ◽  
Badr Ikken ◽  
Abdelkader Outzourhit
Keyword(s):  
Refractive Index ◽  
Vapor Deposition ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

In this work, a detailed description of the various steps involved in the fabrication of high-efficiency hydrogenated amorphous-silicon cells using plasma-enhanced chemical vapor deposition, and a novel shadow masking technique is presented. The influence of the different masking methods on the cell parameters was experimentally investigated. Particularly, the short-circuit current density (Jsc), the fill factor, the open circuit voltage (Voc), and the resistive losses indicated by the shunt (Rsh) and series (Rs) resistances were measured in order to assess the performance of the cells as a function of the masks used during the cell fabrication process. The results indicate that the use of a masking technique where the p-i-n structure was first deposited over the whole surface of a 20 cm2 × 20 cm2 substrate, followed by the deposition, deposits the back contact through a metal mask, and by the ultrasonic soldering of indium to access the front contact is a good alternative to laser scribing in the laboratory scale. Indeed, a record efficiency of 8.8%, with a short-circuit current density (Jsc) of 15.6 mA/cm2, an open-circuit voltage (Voc) of 0.8 V, and a fill factor of 66.07% and low resistive losses were obtained by this technique. Furthermore, a spectroscopic ellipsometry investigation of the uniformity of the film properties (thickness, band gap, and refractive index) on large-area substrates, which is crucial to mini-module fabrication on a single substrate and for heterojunction development, was performed using the optimal cell deposition recipes. It was found that the relative variations of the band gap, thickness, and refractive index n are less than 1% suggesting that the samples are uniform over the 20 cm2 × 20 cm2 substrate area used in this work.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

scholarly journals Introducing a novel high-efficiency arc less heterounction DJ solar cell

2018 ◽  
Vol 31 (1) ◽  
pp. 89-100
Author(s):  
Sobhan Abasian ◽  
Reza Sabbaghi-Nadooshan
Keyword(s):  
Solar Cell ◽  
Lattice Constant ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Hole Mobility ◽  
Short Circuit Current ◽  
Open Circuit ◽  
High Electron

The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ?? group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al0.52In0.48P, GaAs and In0.49Ga0.51P), it was concluded that the semiconductor Al0.52In0.48P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (JSC) = 22.96 mA/cm2, open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(?)= 58.28% were obtained under AM1.5 (1 sun) of radiation.

IMPROVING STABILITY OF CHLOROPHYLL AS NATURAL DYE FOR DYE-SENSITIZED SOLAR CELLS

2017 ◽  
Vol 80 (1) ◽  
Author(s):  
Zainal Arifin ◽  
Sudjito Soeparman ◽  
Denny Widhiyanuriyawan ◽  
Suyitno Suyitno ◽  
Argatya Tara Setyaji
Keyword(s):  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Natural Dyes ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Natural dyes have attracted much researcher’s attention due to their low-cost production, simple synthesis processes and high natural abundance. However the dye-sensitized solar cells (DSSCs) based natural dyes have higher tendency to degradation. This article reports on the enhancement of performance and stability of dye-sensitized solar cells (DSSCs) using natural dyes. The natural dyes were extracted from papaya leaves by ethanol solvent at a temperature of 50 °C. Then the extracted dyes were isolated and modified into Mg-chlorophyll using column chromatography. Mg-chlorophyll was then synthesized into Fe-chlorophyll to improve stability. The natural dyes were characterized using ultraviolet-visible spectrometry, Fourier transform infrared spectroscopy, and cyclic voltammetry. The performance of DSSCs was tested using a solar simulator. The results showed the open-circuit voltage, the short-circuit current density, and the efficiency of the extracted papaya leaves-based DSSCs to be 325 mV, 0.36 mA/cm2, and 0.07%, respectively. Furthermore, the DSSCs with purified chlorophyll provide high open-circuit voltage of 425 mV and short-circuit current density of 0.45 mA/cm2. The use of Fe-chlorophyll for sensitizing the DSSCs increases the efficiency up to 2.5 times and the stability up to two times. The DSSCs with Fe-chlorophyll dyes provide open-circuit voltage, short-circuit current density, and efficiency of 500 mV, 0.62 mA/cm2, and 0.16%, respectively. Further studies to improve the current density and stability of natural dye-based DSSCs along with an improvement in the anchor between dyes and semiconducting layers are required.

High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap

2019 ◽  
Vol 34 (04) ◽  
pp. 2050053
Author(s):  
Fatemeh Ghavami ◽  
Alireza Salehi
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Efficiency ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Absorber Layer ◽  
Window Layer

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

2005 ◽  
Vol 12 (01) ◽  
pp. 19-25 ◽  
Author(s):  
M. RUSOP ◽  
M. ADACHI ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Amorphous Carbon ◽  
Current Density ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Phosphorus Doped

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

scholarly journals A Study on the Effects of Selenization Temperature on the Properties of Na-Doped Cu2ZnSn(S,Se)4 Thin Film and Its Correlation with the Performance of Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2434
Author(s):  
Zhanwu Wang ◽  
Dongyue Jiang ◽  
Fancong Zeng ◽  
Yingrui Sui
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Sol Gel ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Post Annealing ◽  
Different Temperatures ◽  
Selenization Temperature

In this study, we prepared Na-doped Cu2ZnSn(S,Se)4 [noted as (Na0.1Cu0.9)2ZnSn(S,Se)4] films on the Mo substrate using a simple and cheap sol–gel method together with the post-annealing technique. The effects of selenization temperature on the properties of Na-doped Cu2ZnSn(S,Se)4 were surveyed. The results indicated that some sulfur atoms in the films were substituted by selenium atoms by increasing the selenization temperature, and all films selenized at different temperatures had a kesterite structure. As the selenization temperature increased from 520 to 560 °C, the band gaps of the film can be tuned from 1.03 to 1 eV. The film with better morphology and opto-electrical properties can be obtained at an intermediate selenization temperature range (e.g., 540 °C), which had the lowest resistivity of 47.7 Ω cm, Hall mobility of 4.63 × 10−1 cm2/Vs, and carrier concentration of 2.93 × 1017 cm−3. Finally, the best power conversion efficiency (PCE) of 4.82% was achieved with an open circuit voltage (Voc) of 338 mV, a short circuit current density (Jsc) of 27.16 mA/cm2 and a fill factor (FF) of 52.59% when the selenization temperature was 540 °C.

Light-induced Open-circuit Voltage Increase in Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Shengzhi Xu ◽  
Shaozhen Xiong ◽  
Xinhua Geng ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Limited Current

ABSTRACTLight-induced metastability of amorphous/microcrystalline (micromorph) silicon tandem solar cell, in which the microcrystalline bottom cell was deposited in a single-chamber system, has been studied under a white light for more than 1000 hours. Two different light-induced metastable behaviors were observed. The first type was the conventional light-induced degradation, where the open-circuit voltage (Voc), fill factor (FF), and short-circuit current density (Jsc) were degraded, hence the efficiency was degraded as well. This phenomenon was observed mainly in the tandem cells with a bottom cell limited current mismatch. The second type was with a light-induced increase in Voc, which sometimes resulted in an increase in efficiency. The second type of light-induced metastability was observed in the tandem cells with a top cell limited current mismatch. The possible mechanisms for these phenomena are discussed.

Sign in / Sign up

Export Citation Format

Share Document