scholarly journals Virtual instruments in low-frequency noise spectroscopy experiments

2015 ◽  
Vol 28 (1) ◽  
pp. 17-28
Author(s):  
Adam Stadler ◽  
Andrzej Dziedzic
Keyword(s):  
Thick Film ◽  
Virtual Instrument ◽  
Low Frequency ◽  
Low Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Noise Component ◽  
Noise Spectroscopy ◽  
Noise Map

Low-frequency noise spectroscopy (LFNS) is an experimental technique to study noise spectra, typically below 10 kHz, as a function of temperature. Results of LFNS may be presented as the ?so-called? noise maps, giving a detailed insight into fluctuating phenomena in electronic devices and materials. The authors show the usefulness of virtual instrument concept in developing and controlling the measurement setup for LFNS experiments. An example of a noise map obtained for polymer thick-film resistors (PTFRs), made of commercial compositions, for temperature range 77 K - 300 K has been shown. The experiments proved that 1/f noise caused by resistance fluctuations is the dominant noise component in the studied samples. However, the obtained noise map revealed also thermally activated noise sources. Furthermore, parameters describing noise properties of resistive materials and components have been introduced and calculated using data from LFNS. The results of the work may be useful for comparison of noise properties of different resistive materials, giving also directions for improvement of thick-film technology in order to manufacture reliable, low-noise and stable PTFRs.

scholarly journals Noise Properties Of Thick-Film Conducting Lines For Integrated Inductors

2015 ◽  
Vol 22 (2) ◽  
pp. 229-240 ◽  
Author(s):  
Adam Witold Stadler ◽  
Andrzej Kolek ◽  
Krzysztof Mleczko ◽  
Zbigniew Zawiślak ◽  
Andrzej Dziedzic ◽  
...  
Keyword(s):  
Thick Film ◽  
Low Frequency ◽  
Low Noise ◽  
Frequency Noise ◽  
Noise Sources ◽  
Noise Component ◽  
Integrated Inductors ◽  
Noise Amplifier ◽  
Straight Segments ◽  
Biased Samples

Abstract Studies of noise properties of thick-film conducting lines from Au or PdAg conductive pastes on LTCC or alumina substrates are reported. Experiments have been carried out at the room temperature on samples prepared in the form of meanders by traditional screen-printing or laser-shaping technique. Due to a low resistance of the devices under test (DUTs), low-frequency noise spectra have been measured for the dc-biased samples arranged in a bridge configuration, transformer-coupled to a low-noise amplifier. The detailed analysis of noise sources in the signal path and its transfer function, including the transformer, has been carried out, and a procedure for measurement setup self-calibration has been described. The 1/f noise component originating from resistance fluctuations has been found to be dominant in all DUTs. The analysis of experimental data leads to the conclusion that noise is produced in the bends of meanders rather than in their straight segments. It occurs that noise of Au-based laser-shaped lines is significantly smaller than screen-printed ones. PdAg lines have been found more resistive but simultaneously less noisy than Au-based lines.

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low‐Frequency Noise Spectroscopy

2019 ◽  
Vol 217 (7) ◽  
pp. 1900701
Author(s):  
Yuan Ren ◽  
Leidang Zhou ◽  
Kang Zhang ◽  
Liang Chen ◽  
Xiaoping Ouyang ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Low Frequency ◽  
Schottky Contacts ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Irradiation Effects ◽  
Noise Spectroscopy

Low frequency noise sources in AlGaN/GaN HEMTs

1999 ◽  
Author(s):  
J. A. Garrido ◽  
F. Calle ◽  
E. Muñoz ◽  
I. Izpura ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Gan Hemts

Low Frequency Noise Spectroscopy for Schottky Contacts

2000 ◽  
Vol 37 (6) ◽  
pp. 966 ◽  
Author(s):  
Lee J. I. ◽  
Han I .K. ◽  
Heo D. C. ◽  
Brini J. ◽  
Chovet A. ◽  
...  
Keyword(s):  
Low Frequency ◽  
Schottky Contacts ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

scholarly journals Low-Frequency Noise Evaluation on a Commercial Magnetoimpedance Sensor at Submillihertz Frequencies for Space Magnetic Field Detection

Sensors ◽  
2019 ◽  
Vol 19 (22) ◽  
pp. 4888
Author(s):  
Tao Wang ◽  
Chen Kang ◽  
Guozhi Chai
Keyword(s):  
Magnetic Field ◽  
Low Frequency ◽  
Temperature Stability ◽  
Space Missions ◽  
Low Noise ◽  
Integration Time ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Field Detection ◽  
Measurement Limit

The purpose of this study was to measure the low-frequency noise and basic performance of a commercial magnetoimpedance (MI) sensor at sub-millihertz frequencies for use in space missions. Normally, space missions require measuring very weak magnetic fields with a long integration time, such as the space gravitational wave detection mission requiring sub-millihertz frequencies. We set up a platform for measuring the performance on this MI sensor, including low-frequency noise, measurement limit, linearity, and temperature stability. The results show that the low-frequency noise of the MI sensor is below 10 nT/√Hz at 1 mHz and below 100 nT/√Hz at 0.1 mHz; its measurement limit is 600 pT. The MI sensor is characterized by high precision, small size, and low noise, demonstrating considerable potential for application in magnetically sensitive experiments requiring long integration time. This is an effect way to solve the problem that there is on one suitable magnetic sensor at space magnetic field detection, but the sensor requires improvements in temperature stability.

Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrared Detectors

2020 ◽  
Vol 67 (2) ◽  
pp. 547-551 ◽  
Author(s):  
Liqi Zhu ◽  
Jian Huang ◽  
Zongheng Xie ◽  
Zhuo Deng ◽  
Lu Chen ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy
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