scholarly journals Morphometric changes of corpora allata in Morimus funereus müls. (Cerambycidae) larvae during thermal stress

2007 ◽  
Vol 59 (3) ◽  
pp. 47P-48P
Author(s):  
Marija Mrdakovic ◽  
Jelica Lazarevic ◽  
Vesna Peric-Mataruga ◽  
Milena Jankovic-Tomanic ◽  
Larisa Ilijin ◽  
...  
2005 ◽  
Vol 57 (2) ◽  
pp. 83-92 ◽  
Author(s):  
Marija Mrdakovic ◽  
Larisa Ilijin ◽  
Milena Jankovic-Tomanic ◽  
Milena Vlahovic ◽  
Zlatko Prolic ◽  
...  

The effects of different temperatures (23?C and 8?C) on activity of corpora allata (CA) and dorsolateral (L1, L2) protocerebral neurosecretory neurons were investigated in Morimus funereus Mulsant (1863) larvae collected from a natural population during March. Activity of CA was revealed by monitoring of CA volume and cell number. Increase of CA volume after two day exposure to both temperatures was shown to be the result of increase in cell number. Activity of CA was higher at 23?C than 8?C. Activity of L1 and L2 neurosecretory neurons was inhibited at both temperatures. Neurosecretory neurons were more sensitive to temperature of 23?C than 8?C. It can be supposed that dorsolateral neurosecretory neurons synthesize neurohormones that affect CA activity, depending on environmental temperature.


1992 ◽  
Vol 103 (4) ◽  
pp. 679-686 ◽  
Author(s):  
J. Ivanović ◽  
M. Janković-Hladni ◽  
S. Djordjević ◽  
J. Lazarević ◽  
S. Stamenović

2003 ◽  
Vol 55 (3-4) ◽  
pp. 21P-22P ◽  
Author(s):  
Marija Mrdakovic-Mitic ◽  
Larisa Ilijin ◽  
Mina Vlahovic ◽  
Milena Jankovic-Tomanic ◽  
Vesna Peric-Mataruga ◽  
...  

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.


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