scholarly journals Growth of Single-crystal Silicon Semiconductor under High Magnetic-field Conditions.

1998 ◽  
Vol 33 (2) ◽  
pp. 54-59
Author(s):  
Izumi FUSEGAWA ◽  
Tomohiko OHTA ◽  
Shigeru NAGASAWA
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
High Magnetic Field ◽  
Single Crystal Silicon ◽  
Field Conditions ◽  
Crystal Silicon

scholarly journals New Cutting Method of Single Crystal Silicon Using a Pulsed Magnetic Field.

1999 ◽  
Vol 23 (4−2) ◽  
pp. 1477-1480
Author(s):  
H. Kaneko ◽  
K. Ohashi ◽  
Y. Tawara ◽  
T. Haruyama ◽  
N. Miura
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Pulsed Magnetic Field ◽  
Crystal Silicon ◽  
Cutting Method

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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