scholarly journals Non-invasive current and voltage imaging techniques for integrated circuits using scanning probe microscopy. Final report, LDRD Project FY93 and FY94

10.2172/93674 ◽  
1995 ◽  
Author(s):  
A.N. Campbell ◽  
E.I. Jr. Cole ◽  
Paiboon Tangyunyong
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Imaging Techniques ◽  
Scanning Probe ◽  
Final Report ◽  
Probe Microscopy ◽  
Voltage Imaging ◽  
Non Invasive

Towards non-invasive high-resolution 3D nano-tomography by ultrasonic scanning probe microscopy

2017 ◽  
Author(s):  
Hossein J. Sharahi ◽  
Gajendra Shekhawat ◽  
Vinayak Dravid ◽  
Philip Egberts ◽  
Seonghwan Kim
Keyword(s):  
High Resolution ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Ultrasonic Scanning ◽  
Probe Microscopy ◽  
Non Invasive

Scanning Kelvin Force and Capacitance Microscopy Applications

1998 ◽  
Vol 4 (S2) ◽  
pp. 330-331
Author(s):  
R.J. Kline ◽  
J.F. Richards ◽  
P.E. Russell
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Small Capacitance ◽  
Force Monitoring ◽  
Work Functions

Scanning Probe Microscopy (SPM) is being developed as a possible solution to the problems inherent with analyzing the nanometer scale electronic properties of ULSI integrated circuits. Scanning Kelvin Probe Microscopy (SKPM) and Scanning Capacitance Microscopy (SCM) are both being developed to provide two dimensional dopant profiles of semiconductor devices. SKPM can also determine surface potentials, work functions, dielectric properties, and capacitance.SKPM is based on the concept of Kelvin probe oscillating capacitor work function measurements. The small capacitance area of the SKPM tip and the high resistance of the system produce difficulties in monitoring and minimizing the current in the system. SKPM solves this problem by utilizing the force monitoring capability of the SPM to minimize the Kelvin force instead of the current. An AC voltage applied to the cantilever produces a DC force and AC forces at the AC frequency and the first harmonic of the AC frequency.

Optical Nanoprobe Electrical Microscopy

2013 ◽  
Author(s):  
Stephen Ippolito ◽  
Michael Tenney ◽  
Sweta Pendyala ◽  
Larry Fischer ◽  
John Sylvestri ◽  
...  
Keyword(s):  
Optical Imaging ◽  
Scanning Probe Microscopy ◽  
Imaging Techniques ◽  
Measurement Techniques ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Measurement Capability ◽  
Metal Levels ◽  
Destructive Measurement ◽  
Non Destructive

Abstract This paper describes novel concepts in equipment and measurement techniques that integrate optical electrical microscopy and scanning probe microscopy (SPM) capabilities into a single tool under the umbrella of optical nanoprobe electrical (ONE) microscopy. Optical imaging ONE microscopy permits non-destructive measurement capability that was lost more than a decade ago, when the early metal levels became electrically inaccessible to microprobers. SPM imaging techniques do not have sensitivity to many types of defects, and nanoprobing all of the transistors in an area pinpointed by optical electrical microscopy is often impractical. Thus, in many cases, ONE microscopy capability will permit analytical success instead of failure.

Characterization of Thin Films Using Different Scanning Probe Microscopy (SPM) Modes

2005 ◽  
Vol 11 (S03) ◽  
pp. 102-105
Author(s):  
D. M. Marulanda ◽  
D. F. Arias ◽  
A. Devia
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Imaging Techniques ◽  
Sample Surface ◽  
Real Space ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Space Images ◽  
Adhesion Properties ◽  
Probe Microscopy

Scanning probe microscopy (SPM) is unique among the imaging techniques in which it provides three-dimensional (3-D) real-space images and among surface analysis techniques in which it allows spatially localized measurements of structure and properties. Under optimum conditions, subatomic spatial resolution is achieved. The development given has not been only because of its ability to obtain topographic and structural images of the surface at micro and nano scale, but also for the possibility of performing analysis of superficial properties such as local adhesion properties, chemical heterogeneity, and local mechanical properties [1]. The SPM has different variations depending on the interaction between the tip and the sample surface, such as AFM, which has the ability of showing topographic characteristics at atomic scale, LFM, which measures local friction differences, FMM and PDM that measure differences of local elasticity. The instrument counts with the spectroscopy mode and with this it is possible to obtain Force — distance (F-d) curves that give information about the local elastic properties of the sample surface. In this work, TiN and ZrN thin films grown by the PAPVD by pulsed arc technique were studied, using the AFM, LFM, FMM, PDM and spectroscopy F vs. d techniques.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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