scholarly journals GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

2004 ◽  
Author(s):  
Benjamin Lewin Cardozo
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Infrared Astronomy ◽  
Blocked Impurity Band Detectors

Si:Sb blocked impurity band detectors for infrared astronomy

1992 ◽  
Vol 72 (1) ◽  
pp. 273-275 ◽  
Author(s):  
James E. Huffman ◽  
A. G. Crouse ◽  
B. L. Halleck ◽  
T. V. Downes ◽  
Terry L. Herter
Keyword(s):  
Impurity Band ◽  
Infrared Astronomy ◽  
Blocked Impurity Band Detectors

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Germanium far-infrared blocked impurity band detectors

1997 ◽  
Author(s):  
Christopher S. Olsen ◽  
Jeffrey W. Beeman ◽  
Eugene E. Haller
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors

scholarly journals Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors

2002 ◽  
Vol 43 (6) ◽  
pp. 353-360 ◽  
Author(s):  
Jordana Bandaru ◽  
Jeffrey W Beeman ◽  
Eugene E Haller ◽  
Stacy Samperi ◽  
Nancy M Haegel
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Dopant Distribution ◽  
Blocked Impurity Band Detectors

Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

2007 ◽  
Vol 51 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Jeffrey W. Beeman ◽  
Supriya Goyal ◽  
Lothar A. Reichertz ◽  
Eugene E. Haller
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors ◽  
Ion Implanted

Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

2016 ◽  
Vol 184 (1-2) ◽  
pp. 225-230 ◽  
Author(s):  
M. Hanaoka ◽  
H. Kaneda ◽  
S. Oyabu ◽  
M. Yamagishi ◽  
Y. Hattori ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Astronomy ◽  
Bonding Method ◽  
Band Type
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