scholarly journals Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

1998 ◽  
Author(s):  
Christopher Sean Olsen
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Far Infrared ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Germanium far-infrared blocked impurity band detectors

1997 ◽  
Author(s):  
Christopher S. Olsen ◽  
Jeffrey W. Beeman ◽  
Eugene E. Haller
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors

scholarly journals Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors

2002 ◽  
Vol 43 (6) ◽  
pp. 353-360 ◽  
Author(s):  
Jordana Bandaru ◽  
Jeffrey W Beeman ◽  
Eugene E Haller ◽  
Stacy Samperi ◽  
Nancy M Haegel
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Dopant Distribution ◽  
Blocked Impurity Band Detectors

Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors

2002 ◽  
Author(s):  
Reinhard O. Katterloher ◽  
Gerd Jakob ◽  
Mitsuharu Konuma ◽  
Alfred Krabbe ◽  
Nancy M. Haegel ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Far Infrared

Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

2007 ◽  
Vol 51 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Jeffrey W. Beeman ◽  
Supriya Goyal ◽  
Lothar A. Reichertz ◽  
Eugene E. Haller
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors ◽  
Ion Implanted

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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