scholarly journals Electron Cyclotron Resonance Deposition of Amorphous Silicon Alloy Films and Devices, Final Subcontract Report, 1 April 1991 - 31 March 1992

1992 ◽  
Author(s):  
Y. -H. Shing
Keyword(s):  
Amorphous Silicon ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Alloy Films ◽  
Silicon Alloy

Amorphous Silicon-Carbon alloys Deposited by Electron-Cyclotron Resonance PECVD

1996 ◽  
Vol 420 ◽  
Author(s):  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Carbon Source ◽  
Amorphous Silicon ◽  
Cyclotron Resonance ◽  
Urbach Energy ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Hydrogen Dilution ◽  
Silicon Carbon

AbstractHydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical-vapor deposition. Hydrogen is used as the excitation gas in the resonance chamber while silane and methane (or ethylene) are introduced in the main chamber. A minimum of 95% hydrogen dilution is used. The microwave power is kept constant at 150 W. The effect of the type of carbon source gas, silane to carbon source gas ratio, deposition pressure, substrate temperature and hydrogen dilution on the deposition rate, bandgap and Urbach energy are studied. The photoconductivity and the Urbach energy of the ECR-deposited films are compared to those prepared with glow discharge with the same bandgap.

Deposition of Amorphous Silicon by an Electron Cyclotron Resonance Plasma

1993 ◽  
Vol 140 (2) ◽  
pp. 525-529 ◽  
Author(s):  
Katsuhiro Yokota ◽  
Tetsuya Sugahara ◽  
Koushi Kinoshita ◽  
Susumu Tamura ◽  
Saichi Katayama
Keyword(s):  
Amorphous Silicon ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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