scholarly journals Final report on LDRD Project: Quantum confinement and light emission in silicon nanostructures

10.2172/71362 ◽  
1995 ◽  
Author(s):  
T.R. Guilinger ◽  
M.J. Kelly ◽  
D.M. Follstaedt
Keyword(s):  
Quantum Confinement ◽  
Light Emission ◽  
Silicon Nanostructures ◽  
Final Report

Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Komoda ◽  
J.P. Kelly ◽  
A. Nejm ◽  
K.P. Homewood ◽  
P.L.F Hemment ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emission ◽  
Silicon Nanostructures ◽  
Two Phase ◽  
Population Distributions ◽  
Si Nanocrystals ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Si Ion Implantation

ABSTRACTImplantation of Si+ ions into thermal oxides grown on silicon has been used to synthesise a two phase structure consisting of Si nanocrystals in a SiO2 matrix. Various processing conditions have been used in order to modify the size and population distributions of the Si inclusions. Photoluminescence spectra have been recorded from samples annealed in nitrogen, forming gas and oxygen. Both red and blue shifts of the luminescence peaks have been observed. It is concluded that the photoluminescence is a consequence of the effects of quantum confinement but is also dependent on the presence of irradiation-induced defects or Si/SiO2 interface states.

Light Emission from Silicon Nanostructures Produced by Conventional Lithographic and Reactive Ion Etching Techniques

1995 ◽  
Vol 190 (1) ◽  
pp. 91-95 ◽  
Author(s):  
A. G. Nassiopoulos ◽  
S. Grigoropoulos ◽  
D. Papadimitriou ◽  
E. Gocolides
Keyword(s):  
Light Emission ◽  
Reactive Ion Etching ◽  
Silicon Nanostructures ◽  
Ion Etching

SIMPLE QUANTUM CONFINEMENT THEORY FOR EXCITON IN INDIRECT GAP NANOSTRUCTURES

2000 ◽  
Vol 14 (15) ◽  
pp. 1559-1566 ◽  
Author(s):  
NGUYEN THI VAN OANH ◽  
NGUYEN AI VIET
Keyword(s):  
Optical Properties ◽  
Simple Model ◽  
Quantum Confinement ◽  
Tight Binding ◽  
Blue Shift ◽  
Analytic Solutions ◽  
Silicon Nanostructures ◽  
Tight Binding Approximation ◽  
Mass Approximation ◽  
Simple Quantum

We propose in this work a simple quantum confinement theory for excitons based on the effective mass approximation, for investigation of optical properties of indirect gap nanostructures. We show that using this simple model, we can get the analytic solutions and reobtain the main tight-binding approximation numerical results of Hill et al.1 for silicon nanostructures: blue shift of band gap and increase overlap between the states at the band edges when the nanostructures size in decreased.

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

Spatial versus quantum confinement in porous amorphous silicon nanostructures

1999 ◽  
Vol 8 (2) ◽  
pp. 179-193 ◽  
Author(s):  
R.B. Wehrspohn ◽  
J.-N. Chazalviel ◽  
F. Ozanam ◽  
I. Solomon
Keyword(s):  
Amorphous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures

scholarly journals InPBi Quantum Dots for Super-Luminescence Diodes

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 705 ◽  
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Qimiao Chen ◽  
Zhongyunshen Zhu ◽  
Shumin Wang
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emission ◽  
Wide Spectrum ◽  
Active Material ◽  
Low Light ◽  
Center Wavelength ◽  
Emission Efficiency ◽  
Spatial Size ◽  
Lattice Matched

InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications.

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