scholarly journals Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1983-31 October 1984

1984 ◽  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Semiconductor ◽  
Semiconductor Films

Homogeneous chemical vapor deposition of amorphous semiconductor thin films

1983 ◽  
Vol 59-60 ◽  
pp. 659-666 ◽  
Author(s):  
B.A. Scott ◽  
W.L. Olbricht ◽  
J.A. Reimer ◽  
B.S. Meyerson ◽  
D.J. Wolford
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Semiconductor ◽  
Semiconductor Thin Films ◽  
Homogeneous Chemical

Characterization Of Boron Films Prepared By Chemical Vapor Deposition And Their Application In X-Ray Imaging

1993 ◽  
Vol 306 ◽  
Author(s):  
Fang Yuan ◽  
David D. Allred
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Energy Gap ◽  
Complex Refractive Index ◽  
Chemical Vapor ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
X Ray Imaging

AbstractBoron, a low Z element, is useful for x-ray optics since it has a low atomic absorption coefficient. Boron films prepared by chemical vapor deposition were characterized optically, electronically and mechanically. Auger, infrared and hydrogen effusion analyses showed that the films are amorphous hydrogenated boron. The hydrogen content ranges from 8–71%. The measurements of the complex refractive index and the resistance vs. temperature determined that they are a typical amorphous semiconductor with the energy gap ranging from 1.09 to 1.36 eV, decreasing with increasing hydrogen content and with the Fermi energy level pinned about midgap. The real refractive index at 490 nm increases from 3.25–3.59 with increasing hydrogen content. The Young's modulus and hardness were found to be 3.05 × 1013 dyne/cm2 and around 2500 Vickers, respectively. The chemical tests suggested that boron films are stable in nonoxidizing bases and concentrated acids. Some oxidizing bases such as basic ferricyanide and permanganate solutions are good etchants for CVD boron films. Boron coated beryllium x-ray windows which have enhanced resistance to degradation are now commercially available, and self-supporting boron windows are potential future products for x-ray imaging.

New Magnesium Precursors for Doping Semiconductor Films

1997 ◽  
Vol 495 ◽  
Author(s):  
Charles H. Winter ◽  
Jennifer L. Sebestl ◽  
Mary Jane Heeg
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Green Light ◽  
Chemical Vapor ◽  
Green Laser ◽  
Semiconductor Films ◽  
Doped Semiconductors ◽  
Light Emitting ◽  
Magnesium Compounds ◽  
Deposition Processes

ABSTRACTMagnesium-doped semiconductors have existing and anticipated applications in the fabrication of blue and green light-emitting diodes, blue and green laser diodes, and in microelectronics devices. At present, the area is limited by the precursor characteristics of bis(cyclopentadienyl)magnesium and substituted derivatives. We will describe our efforts to identify new magnesium source compounds that are potentially superior to magnesocenes and can be used in chemical vapor deposition processes. Monomeric three- and four-coordinate amides have been synthesized and totally characterized. These complexes are low-melting solids and are significantly more volatile than magnesocene derivatives. We will also describe the synthesis and characterization of several other classes of volatile magnesium compounds that might be useful in chemical vapor deposition processes.

Direct Writing Using Laser Chemical Vapor Deposition

1982 ◽  
Vol 17 ◽  
Author(s):  
S. D. Allen ◽  
A. B. Trigubo ◽  
R. Y. Jan
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Semiconductor Films ◽  
Direct Writing ◽  
Laser Chemical Vapor Deposition ◽  
Si Substrates ◽  
Visible Laser ◽  
Laser Sources ◽  
Transmission And Reflection

ABSTRACTMetal, dielectric and semiconductor films have been deposited by laser chemical vapor deposition (LCVD) using both pulsed and cw laser sources on a variety of substrates. For LCVD on substrates such as quartz, the deposition was monitored optically in both transmission and reflection using a collinear visible laser and the depositing CO2 laser. Deposition initiation and rate were correlated with irradiation conditions, the laser generated surface temperature, and the changing optical properties of the filmpsubstrate during deposition. Single crystallites of W greater than 100 pm tall were deposited using a Kr laser on Si substrates.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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