scholarly journals Ion beam synthesis of CdS, ZnS, and PbS compound semiconductor nanocrystals

1997 ◽  
Author(s):  
C.W. White ◽  
J.D. Budai ◽  
A.L. Meldrum
1997 ◽  
Vol 504 ◽  
Author(s):  
C. W. White ◽  
J. D. Budai ◽  
A. L. Meldrum ◽  
S. P. Withrow ◽  
R. A. Zuhr ◽  
...  

ABSTRACTSequential ion implantation followed by thermal annealing has been used to form encapsulated CdS, ZnS, and PbS nanocrystals in SiO2 and Al2O3 matrices. In SiO2, nanoparticles are nearly spherical and randomly oriented, and ZnS and PbS nanocrystals exhibit bimodal size distributions. In Al2O3, nanoparticles are facetted and oriented with respect to the matrix. Initial photoluminescence (PL) results are presented.


2013 ◽  
Author(s):  
Ranjana S. Varma ◽  
D. C. Kothari ◽  
Ravi Kumar ◽  
P. Kumar ◽  
S. S. Santra ◽  
...  

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.


2006 ◽  
Vol 515 (2) ◽  
pp. 636-639 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
K. Šlapikas ◽  
S. Tamulevičius ◽  
A. Guobienë ◽  
...  

2013 ◽  
Vol 112 (3) ◽  
pp. 801-806 ◽  
Author(s):  
B. Pandey ◽  
P. R. Poudel ◽  
A. K. Singh ◽  
A. Neogi ◽  
D. L. Weathers

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