scholarly journals Si deposition rates in a two-dimensional CVD (chemical vapor deposition) reactor and comparisons with model calculations

1989 ◽  
Author(s):  
W. Breiland ◽  
M. Coltrin
1996 ◽  
Vol 11 (3) ◽  
pp. 694-702 ◽  
Author(s):  
S. W. Reeve ◽  
W. A. Weimer ◽  
D. S. Dandy

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.


2021 ◽  
Vol 54 (4) ◽  
pp. 1011-1022
Author(s):  
Kongyang Yi ◽  
Donghua Liu ◽  
Xiaosong Chen ◽  
Jun Yang ◽  
Dapeng Wei ◽  
...  

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