scholarly journals Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules

10.2172/46644 ◽  
1994 ◽  
Author(s):  
H. Steinberger ◽  
W. Thumm ◽  
R. Freitag ◽  
P.D. Moskowitz ◽  
R. Chapin
Keyword(s):  
Thin Film ◽  
Copper Indium Diselenide ◽  
Photovoltaic Modules ◽  
Copper Indium

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

Copper indium diselenide based thin‐film transistors

1991 ◽  
Vol 59 (16) ◽  
pp. 1990-1991 ◽  
Author(s):  
J. Lai ◽  
L. Cai ◽  
D. L. Morel
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Copper Indium Diselenide ◽  
Copper Indium

Enhanced Mo Adhesion on Glass With Cr Interlayers for Copper Indium Diselenide Thin Film Devices

1996 ◽  
Vol 426 ◽  
Author(s):  
Jeff Alleman ◽  
Dave Ginley ◽  
Falah Hasoon ◽  
Sally Asher ◽  
Rommel Noufi
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Bulk Material ◽  
Surface Preparation ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Process Conditions ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Glass Interface

AbstractA key element of current Copper Indium Diselenide (CIS) and Copper Indium Gallium Diselenide (CIGS) thin film solar cells is the use of a Mo back contact on soda lime glass (SGL). Because of surface preparation problems, high process temperatures, and mismatch of thermal expansion coefficients, adhesion of the Mo to the soda lime glass can be variable. Also beneficial is the Na facile diffusion of the glass into the absorber layer. We report on the use of thin Cr interlayers to improve the adhesion at the Mo/glass interface. The films were subsequently annealed in vacuum under normal process conditions. Adhesion was excellent and quite uniform for Mo layers with a Cr interlayer of 50 to 800 Å compared to control samples without Cr. X-ray Photoelectron Spectroscopy (XPS) data suggests CrO bonding at the glass interface and Cr metallic bonding at the Cr Mo interface. Secondary Ion Mass Spectrometry (SIMS) data for Mo/Cr films shows diffusion of Na throughout the Mo layer identical to that for Mo alone samples. Resistivities of the films have been measured to be 11 μhms-cm, twice that for bulk material of 5.7 μohms-cm. CIGS films were then grown for comparison to films grown on Mo only substrates.

scholarly journals Nanosecond Laser Lift-Off of a Copper-Indium-Diselenide Thin Film at a Wavelength of 1342nm

2013 ◽  
Vol 41 ◽  
pp. 746-751 ◽  
Author(s):  
R. Moser ◽  
M. Domke ◽  
G. Marowsky ◽  
H.P. Huber
Keyword(s):  
Thin Film ◽  
Nanosecond Laser ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Lift Off
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