scholarly journals DUODEHCATRON: A GENERAL PURPOSE NEGATIVE AND POSITIVE ION SOURCE.

1972 ◽  
Author(s):  
H.T. Richards ◽  
G.M. Klody
Keyword(s):  
General Purpose ◽  
Ion Source ◽  
Positive Ion

How to select the best condition for operating a positive ion source of molecular beam surface ionization typea)

1994 ◽  
Vol 65 (5) ◽  
pp. 1766-1769 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Katsushi Ohgami ◽  
Kiyohiko Funato ◽  
Junji Nakamura
Keyword(s):  
Molecular Beam ◽  
Ion Source ◽  
Surface Ionization ◽  
Beam Surface ◽  
Positive Ion

High Resolution FIB as a General Materials Science Tool

1998 ◽  
Vol 4 (S2) ◽  
pp. 492-493 ◽  
Author(s):  
M.W. Phaneuf ◽  
J. Li ◽  
T. Malis
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Materials Science ◽  
Ion Beam ◽  
General Purpose ◽  
Ion Source ◽  
Specimen Preparation ◽  
Ion Beam Sputtering ◽  
Imaging Characteristics ◽  
Beam Sputtering

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.

Ammonia in the Ion-Source. III. Clustering With N-Oxides, Sulfoxides and Sulfones

1986 ◽  
Vol 39 (12) ◽  
pp. 2161 ◽  
Author(s):  
RG Gillis
Keyword(s):  
Chemical Ionization ◽  
Low Pressure ◽  
Ion Source ◽  
Unimolecular Decomposition ◽  
Positive Ion

Under positive ion chemical ionization conditions, with ammonia as reagent gas at relatively low pressure, N-oxides, sulfoxides and sulfones form clusters with a proton and one or more ammonia molecules; these clusters can be represented as [M+H]+, [M+NH4]+, [M+N2H7]+, [2M+H]+ and [2M+NH4]+. The unimolecular decomposition of the clusters can be followed by the accompanying metastable peaks.

Characteristics of 80 keV positive ion source for Large Helical Device

2010 ◽  
Vol 81 (2) ◽  
pp. 02B116 ◽  
Author(s):  
H. Nakano ◽  
M. Osakabe ◽  
K. Tsumori ◽  
M. Sato ◽  
M. Shibuya ◽  
...  
Keyword(s):  
Ion Source ◽  
Positive Ion

How to select the best condition for operating a positive ion source of molecular beam surface ionization type (abstract)a)

1994 ◽  
Vol 65 (4) ◽  
pp. 1398-1398
Author(s):  
Hiroyuki Kawano ◽  
Katsushi Ohgami ◽  
Kiyohiko Funato ◽  
Junji Nakamura
Keyword(s):  
Molecular Beam ◽  
Ion Source ◽  
Surface Ionization ◽  
Beam Surface ◽  
Positive Ion

scholarly journals Ion?Molecule Reactions and Mobilities of SF3+ and SF5+ Ions in SF6 Gas

1993 ◽  
Vol 46 (6) ◽  
pp. 799 ◽  
Author(s):  
ZA Talib ◽  
M Saporoschenko
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Drift Tube ◽  
Ion Source ◽  
Zero Field ◽  
Number Density ◽  
Mobility Data ◽  
Ion Molecule Reactions ◽  
Positive Ion

Positive ion-molecule reactions in 8F6 were studied in a static drift-tube mass spectrometer using electron impact at 100 eY as the ion source. The ratio of electric field strength to gas number density, E / N, was typically varied from 40-282 Td and pressure ranged from 0�1 to o� 8 Torr. The most important processes were found to be 8Ft + SF6 ---+ 8Ft + 8F6 + F2 and 8Ft + 8F6 ---+ (82Fg)+* ---+ 82Ft + F 2. The interaction potentials for the 8Ft and 8Ft ions in SF6 were also found by using the measured mobility data which were obtained using a pulsed-ion transit-time method. We found that the (12,4, a* = 0�1) core model was adequate to describe the mobility over the range of E / N studied. The zero-field reduced mobilities for 8Ft and 8Ft were determined to be 0�68 and 0�55cm2y-1 s- 1 respectively.

A Universal Negative or Positive Ion Source

1979 ◽  
Vol 26 (3) ◽  
pp. 3708-3712 ◽  
Author(s):  
G. D. Alton
Keyword(s):  
Ion Source ◽  
Positive Ion

Selection of the residual gas pressure suitable for operating a positive ion source of thermal ionization type

1998 ◽  
Vol 69 (2) ◽  
pp. 1182-1184 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Keiko Ogasawara ◽  
Hajime Kobayashi ◽  
Akihide Tanaka ◽  
Tomoko Takahashi ◽  
...  
Keyword(s):  
Ion Source ◽  
Gas Pressure ◽  
Thermal Ionization ◽  
Residual Gas ◽  
Positive Ion ◽  
Selection Of
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