scholarly journals Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

1997 ◽  
Author(s):  
R.J. Buss
Keyword(s):  
Silicon Carbide ◽  
Rf Plasma ◽  
Final Report ◽  
Plasma Synthesis

Preparation of silicon carbide SiC-based nanopowders by the aerosol-assisted synthesis and the DC thermal plasma synthesis methods

2015 ◽  
Vol 63 ◽  
pp. 164-172 ◽  
Author(s):  
Cezary Czosnek ◽  
Mirosław M. Bućko ◽  
Jerzy F. Janik ◽  
Zbigniew Olejniczak ◽  
Michał Bystrzejewski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Plasma ◽  
Synthesis Methods ◽  
Plasma Synthesis ◽  
Thermal Plasma Synthesis

Plasma Process Routes to Synthesis of Carbide, Boride and Nitride Ceramic Powders

1987 ◽  
Vol 98 ◽  
Author(s):  
Aaron J. Becker ◽  
Thomas N. Meyer ◽  
Frances N. Smith ◽  
Jon F. Edd
Keyword(s):  
Silicon Carbide ◽  
Titanium Diboride ◽  
Cost Effective ◽  
Future Application ◽  
Rf Plasma ◽  
Labor Costs ◽  
Plasma Process ◽  
Ceramic Powders ◽  
Conversion Efficiencies ◽  
Electronic Substrates

ABSTRACTAn iterative technique to develop plasma processing, consisting of identifying materials with unique properties, calculating conversion efficiencies, product purity and power from thermodynamic data for the chemical reactions selected to produce it and modeling the process mathematically and physically to determine capital and labor costs is illustrated with production of silicon carbide and titanium diboride in Alcoa's DC plasma facility. The work shows that submicron silicon carbide and titanium diboride containing less than 0.2% oxygen can be produced with plasmas at costs competitive with traditional processes. It has also been reported that aluminum nitride, a material which has the high thermal conductivity needed for high power electronic substrates, can be satisfactorily produced by reacting aluminum powder with nitrogen in an RF plasma system. Future application of plasmas for production of ceramics will depend on discovery of unique properties and cost effective process optimization.

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

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