scholarly journals Modular fabrication and characterization of complex silicon carbide composite structures Advanced Reactor Technologies (ART) Research Final Report (Feb 2015 – May 2017)

2017 ◽  
Author(s):  
Hesham Khalifa
2007 ◽  
Vol 41 (10) ◽  
pp. 1197-1215 ◽  
Author(s):  
Roy M. Sullivan ◽  
Pappu L.N. Murthy ◽  
Subodh K. Mital ◽  
Joseph L. Palko ◽  
Jacques C. Cuneo ◽  
...  

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.


2012 ◽  
Vol 20 (4) ◽  
pp. 845-849 ◽  
Author(s):  
Yong Kong ◽  
Ya Zhong ◽  
Xiao-dong Shen ◽  
Sheng Cui ◽  
Junjun Zhang ◽  
...  

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