scholarly journals Light output of semiconductor laser materials excited by a flash x-ray machine

1972 ◽  
Author(s):  
J. Stevens ◽  
J. Artuso ◽  
Q. Klinger
Keyword(s):  
Semiconductor Laser ◽  
Light Output ◽  
Laser Materials ◽  
X Ray

scholarly journals Quantitative X-ray Spectroscopy of Compound Semiconductor LASER

Materia Japan ◽  
2001 ◽  
Vol 40 (12) ◽  
pp. 1005-1005
Author(s):  
Tetsuyuki Okano ◽  
Sayoko Tametoh ◽  
Mina Arai ◽  
Takashi Kouzaki ◽  
Yasufumi Yabuuchi
Keyword(s):  
Semiconductor Laser ◽  
Compound Semiconductor ◽  
X Ray

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

Suppression of BaF2 Slow Component of X-RAY Luminescence in Non-Stoichiometric Bao.9R0.1F2.1 Crystals (R=Rare Earth Element)

1994 ◽  
Vol 348 ◽  
Author(s):  
B.P. Sobolev ◽  
E.A. Krivandina ◽  
S.E. Derenzo ◽  
W.W. Moses ◽  
A.C. West
Keyword(s):  
Rare Earth ◽  
Rare Earth Element ◽  
Earth Element ◽  
Dopant Concentration ◽  
Slow Component ◽  
Light Output ◽  
Fast Component ◽  
Significant Suppression ◽  
Low Light ◽  
X Ray

ABSTRACTA series of BaF2 crystals doped with 10% mole fraction of each rare earth element has been grown, and the effect of these dopants on the slow luminescence (due to anionic self trapped excitons) and fast luminescence (due to core-valence transitions) has been studied. While significant suppression was observed for both components, the best dopants for suppressing the slow component of barium fluoride (up to 25-50%) while maintaining the luminosity of the fast component are La, Y, and Lu. The luminescence of Ba0.9Eu0.1F2.1 is almost entirely fast (>90%), but with low light output. For two rare earth dopants (La and Gd), the effect of slow and fast component suppression was studied as a function of concentration (Ba1-xRxF2+x with x≦0.5 for R=La and x≦0.3 for R=Gd). The suppression is non-linear with dopant concentration, with the relative degree of slow component suppression correlated with the melting point of these samples.

scholarly journals Effect of sulfur on the scintillation properties of mixed ZnSxSe1–x crystals

2018 ◽  
pp. 36-42
Author(s):  
O. G. Trubaieva ◽  
M. A. Chaika ◽  
O. V. Zelenskaya ◽  
A. I. Lalayants ◽  
S. N. Galkin
Keyword(s):  
Directional Solidification ◽  
Sulfur Content ◽  
Light Output ◽  
Luminescent Properties ◽  
High Energy ◽  
Luminescence Spectra ◽  
Bulk Crystals ◽  
X Ray ◽  
Basic Properties ◽  
Better Than

ZnSxSe1–x based luminescent materials are promising for use as X-ray and g-ray detectors. The main advantage of ZnSxSe1–x crystals is the possibility of making of solid solutions over an entire X-range. It was found that varying the composition of ZnSxSe1–x crystals can change their luminescent properties. Many studies were focused on obtaining ZnSxSe1–x mixed crystals, most using a vapour phase growth methods, and only some of works used the directional solidification. The directional solidification techniques allow growing large ZnSxSe1–x crystals for high-energy particles detectors. Practical use, however, requires the knowledge about luminescent properties of ZnSxSe1–x bulk crystals. This study reports the effect of sulfur content on basic properties of ZnSxSe1–xx bulk crystals grown by Bridgman-Stockbarger method. Six different compounds were studied: ZnS0.07Se0.93, ZnS0.15Se0.85, ZnS0.22Se0.78, ZnS0.28Se0.72, ZnS0.32Se0.68, ZnS0.39Se0.61. The ZnSe(Al) and ZnSe(Te) crystals grown at the similar conditions were used as reference. X-ray luminescence was studied using РЕИС-И (REIS-I) X-ray source (Cu, U = 10—45 kV). КСВУ-23 (KSVU-23) spectrophotometer was used to analyse the emission spectra. The afterglow level h(%) was determined by Smiths Heimann AMS-1 spectrophotometer at excitation by such X-ray and g-ray sources as 123Cs and 241Am (59.5 keV). Light output is one of the main characteristics of the scintillator, which determines its quality as a detector. The ZnSxSe1-x crystals demonstrated increase in the intensity of X-ray induced luminescence spectra with increasing of sulfur content and reached maximum for ZnS0.22Se0.78 composition. Light output of ZnSxSe1–x bulk crystals are higher than those of ZnSe(Te) and ZnSe(Al) commercial crystals. Moreover, thermal stability of scintillation light output of ZnSxSe1–x bulk crystals are also better than those. This investigation has revealed that basic properties of ZnSxSe1–x based scintillation detectors are better than those of ZnSe(Te) and ZnSe(Al).

scholarly journals On the Optical Response of Tellurium Activated Zinc Selenide ZnSe:Te Single Crystal

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 961
Author(s):  
Dionysios Linardatos ◽  
Anastasios Konstantinidis ◽  
Ioannis Valais ◽  
Konstantinos Ninos ◽  
Nektarios Kalyvas ◽  
...  
Keyword(s):  
Single Crystal ◽  
Energy Absorption ◽  
Quantum Efficiency ◽  
Zinc Selenide ◽  
Light Output ◽  
Absorption Efficiency ◽  
Detective Quantum Efficiency ◽  
X Ray ◽  
Luminescence Efficiency ◽  
Energy Absorption Efficiency

In this study, the light output of a zinc selenide activated with tellurium (ZnSe: Te) single crystal was measured for X-ray radiography applications. A cubic crystal (10 × 10 × 10 mm) was irradiated using X-rays with tube voltages from 50 to 130 kV. The resulting energy absorption efficiency, detective quantum efficiency, and absolute luminescence efficiency were compared to published data for equally sized GSO: Ce (gadolinium orthosilicate) and BGO (bismuth germanium oxide) crystals. The emitted light was examined to estimate the spectral compatibility with widely used optical sensors. Energy absorption efficiency and detective quantum efficiency of ZnSe: Te and BGO were found to be similar, within the X-ray energies in question. Light output of all three crystals showed a tendency to increase with increasing X-ray tube voltage, but ZnSe: Te stood at least 2 EU higher than the others. ZnSe: Te can be coupled effectively with certain complementary metal–oxide–semiconductors (CMOS), photocathodes, and charge-coupled-devices (CCD), as the effective luminescence efficiency results assert. These properties render the material suitable for various imaging applications, dual-energy arrays included.

Light Output and X-Ray Attenuation Measurements for Some Commercial Intensifying Screens

Radiology ◽  
1978 ◽  
Vol 128 (3) ◽  
pp. 767-774 ◽  
Author(s):  
B. Michael Moores ◽  
Anne Walker
Keyword(s):  
Light Output ◽  
X Ray

Significant Enhancement in Light Output of Photonic-Crystal-Based YAG:Ce Scintillator for Soft X-Ray Detectors

2019 ◽  
Vol 66 (12) ◽  
pp. 2435-2439
Author(s):  
HuaiNa Yu ◽  
XiangYu Meng ◽  
ZhenHua Chen ◽  
XiangJun Zhen ◽  
Jun Zhao ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Light Output ◽  
Significant Enhancement ◽  
X Ray

Simulation of a Ridge-Type Semiconductor Laser with Transversal Diffraction Gratings

2021 ◽  
Author(s):  
Tatsuhiro Hirose ◽  
Takahiro Numai
Keyword(s):  
Semiconductor Laser ◽  
Semiconductor Lasers ◽  
Light Output ◽  
Diffraction Gratings ◽  
Transverse Mode ◽  
Type Semiconductor ◽  
Horizontal Transverse Mode

Abstract This paper reports on improvement of stability of the fundamental horizontal transverse mode in a ridge-type semiconductor laser by incorporating transversal diffraction gratings. Kinks do not appear in current versus light-output curves by appropriately designing the number of the grating periods when the mesa width is 5 μm in which kinks exist in current versus light-output curves for conventional ridge-type semiconductor lasers.

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