scholarly journals Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation

1996 ◽  
Author(s):  
J.D. Budai ◽  
C.W. White ◽  
S.P. Withrow ◽  
R.A. Zuhr ◽  
J.G. Zhu
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Semiconductor Nanocrystals

scholarly journals Synthesis, Optical Properties, and Microstructure of Semiconductor Nanocrystals Formed by Ion Implantation

1996 ◽  
Vol 452 ◽  
Author(s):  
J. D. Budai ◽  
C. W. White ◽  
S. P. Withrow ◽  
R. A. Zuhr ◽  
J. G. Zhu
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Lattice Structure ◽  
Semiconductor Nanocrystals ◽  
Surface Region ◽  
Substrate Material ◽  
Fused Silica ◽  
High Dose ◽  
Si Substrates ◽  
Nanostructured Composite

AbstractHigh-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. We have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdSxSe1x, CdTe, ZnS, ZnSe) in fused silica, Al2O3 and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.

Optical properties of single semiconductor nanocrystals

2006 ◽  
Vol 8 (43) ◽  
pp. 4989-5011 ◽  
Author(s):  
Daniel E. Gómez ◽  
Marco Califano ◽  
Paul Mulvaney
Keyword(s):  
Optical Properties ◽  
Semiconductor Nanocrystals

Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Visible Region ◽  
Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

Influence of ion implantation on the optical properties of magnetic garnet films

1990 ◽  
Author(s):  
G. Schueer ◽  
D. Kollewe ◽  
Horst Doetsch ◽  
A. Brockmeyer
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Garnet Films ◽  
Magnetic Garnet

Optical properties of surface modified polypropylene by plasma immersion ion implantation technique

2010 ◽  
Vol 97 (8) ◽  
pp. 081908 ◽  
Author(s):  
Sk. Faruque Ahmed ◽  
Myoung-Woon Moon ◽  
Chansoo Kim ◽  
Yong-Jun Jang ◽  
Seonghee Han ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Implantation Technique ◽  
Plasma Immersion Ion Implantation ◽  
Surface Modified

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

1998 ◽  
Vol 253 (1-2) ◽  
pp. 284-291 ◽  
Author(s):  
Hirofumi Kakemoto ◽  
Hiroshi Katsumata ◽  
Takeaki Takada ◽  
Yu-shin Tsai ◽  
Masataka Hasegawa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Optical properties of the black diamond produced by ion implantation

2011 ◽  
Vol 26 (13) ◽  
pp. 1572-1576 ◽  
Author(s):  
Jae-Won Park ◽  
Hyung-Jin Kim ◽  
Young-Chool Kim
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Image Position

Abstract

Symmetry Breaking Induced Activation of Nanocrystal Optical Transitions

MRS Advances ◽  
2018 ◽  
Vol 3 (14) ◽  
pp. 711-716 ◽  
Author(s):  
Peter C. Sercel ◽  
Andrew Shabaev ◽  
Alexander L. Efros
Keyword(s):  
Optical Properties ◽  
Fine Structure ◽  
Symmetry Breaking ◽  
Semiconductor Nanocrystals ◽  
Radiative Lifetime ◽  
Multipole Expansion ◽  
Cdse Nanocrystals ◽  
Coulomb Center ◽  
Charged Center ◽  
Positively Charged

ABSTRACTWe have analysed the effect of symmetry breaking on the optical properties of semiconductor nanocrystals due to doping by charged impurities. Using doped CdSe nanocrystals as an example, we show the effects of a Coulomb center on the exciton fine-structure and optical selection rules using symmetry theory and then quantify the effect of symmetry breaking on the exciton fine structure, modelling the charged center using a multipole expansion. The model shows that the presence of a Coulomb center breaks the nanocrystal symmetry and affects its optical properties through mixing and shifting of the hole spin and parity sublevels. This symmetry breaking, particularly for positively charged centers, shortens the radiative lifetime of CdSe nanocrystals even at room temperature, in qualitative agreement with the increase in PL efficiency observed in CdSe nanocrystals doped with positive Ag charge centers [A. Sahu et.al., Nano Lett. 12, 2587, (2012)]. The effect of the charged center on the photoluminescence and the absorption spectra is shown, with and without the presence of compensating charges on the nanocrystal surface. While spectra of individual nanocrystals are expected to shift and broaden with the introduction of a charged center, configuration averaging and inhomogeneous broadening are shown to wash out these effects. The presence of compensating charges at the NC surface also serves to stabilize the band edge transition energies relative to NCs with no charge centers.

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