Optical properties of the black diamond produced by ion implantation

2011 ◽  
Vol 26 (13) ◽  
pp. 1572-1576 ◽  
Author(s):  
Jae-Won Park ◽  
Hyung-Jin Kim ◽  
Young-Chool Kim
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Image Position

Abstract

Copper nanoparticles synthesized in polymers by ion implantation: Surface morphology and optical properties of the nanocomposites

2014 ◽  
Vol 30 (1) ◽  
pp. 86-92 ◽  
Author(s):  
Vladimir N. Popok ◽  
Vladimir I. Nuzhdin ◽  
V.F. Valeev ◽  
Andrei L. Stepanov
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Ion Implantation ◽  
Copper Nanoparticles ◽  
Image Position

Abstract

Optical properties of defects in nitride semiconductors

2015 ◽  
Vol 30 (20) ◽  
pp. 2977-2990 ◽  
Author(s):  
Ingo Tischer ◽  
Matthias Hocker ◽  
Benjamin Neuschl ◽  
Manfred Madel ◽  
Martin Feneberg ◽  
...  
Keyword(s):  
Optical Properties ◽  
Nitride Semiconductors ◽  
Image Position

Abstract

Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Visible Region ◽  
Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

Influence of ion implantation on the optical properties of magnetic garnet films

1990 ◽  
Author(s):  
G. Schueer ◽  
D. Kollewe ◽  
Horst Doetsch ◽  
A. Brockmeyer
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Garnet Films ◽  
Magnetic Garnet

Optical properties of surface modified polypropylene by plasma immersion ion implantation technique

2010 ◽  
Vol 97 (8) ◽  
pp. 081908 ◽  
Author(s):  
Sk. Faruque Ahmed ◽  
Myoung-Woon Moon ◽  
Chansoo Kim ◽  
Yong-Jun Jang ◽  
Seonghee Han ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Implantation Technique ◽  
Plasma Immersion Ion Implantation ◽  
Surface Modified

Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties

1998 ◽  
Vol 253 (1-2) ◽  
pp. 284-291 ◽  
Author(s):  
Hirofumi Kakemoto ◽  
Hiroshi Katsumata ◽  
Takeaki Takada ◽  
Yu-shin Tsai ◽  
Masataka Hasegawa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Ce3+/Tb3+ activated GdF3, KGdF4, and CeF3 submicro/nanocrystals: Synthesis, phase evolution, and optical properties

2011 ◽  
Vol 26 (23) ◽  
pp. 2916-2923 ◽  
Author(s):  
Chunyan Cao ◽  
Hyun Kyoung Yang ◽  
Jong Won Chung ◽  
Byung Kee Moon ◽  
Byung Chun Choi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Phase Evolution ◽  
Image Position

Abstract

High energy Au+ ion implantation of polar and nonpolar ZnO—Structure modification and optical properties

2020 ◽  
Vol 52 (12) ◽  
pp. 1083-1088 ◽  
Author(s):  
Adéla Jagerová ◽  
Petr Malinský ◽  
Romana Mikšová ◽  
Pavla Nekvindová ◽  
Jakub Cajzl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
High Energy ◽  
Structure Modification
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