scholarly journals Reducing the extraction loss via laser notching the H- beam at the Booster injection revolution frequency

2005 ◽  
Author(s):  
Xi Yang ◽  
Charles M. Ankenbrandt
Author(s):  
Timofey Gorlov ◽  
Alexander Aleksandrov ◽  
Sarah Cousineau ◽  
Yun Liu ◽  
Abdurahim Rakhman ◽  
...  
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2014 ◽  
Vol 85 (2) ◽  
pp. 02A745
Author(s):  
C. Gabor ◽  
J. J. Back ◽  
D. C. Faircloth ◽  
S. R. Lawrie ◽  
A. P. Letchford

2000 ◽  
Vol 101 (1-3) ◽  
pp. 119-123 ◽  
Author(s):  
Wenzhi Zhang ◽  
Yanwen Li ◽  
Qingtian Zhou ◽  
Xiangdong Qi ◽  
G.E.O. Widera
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2010 ◽  
Vol 168-170 ◽  
pp. 969-972
Author(s):  
Jian Qing Qian ◽  
Ji Ping Chen ◽  
Bao Qiao Wu ◽  
Jie Ca Wu

The application of vanadium-nitrogen alloy to develop a certain low carbon high strength H-beam steel was determined through the combination of theoretical study, product requirements and existing practical conditions. The specific rolling process was further defined through laboratory experiments. The developed low carbon high strength H-beam steel was trial produced and its properties were also analyzed. The results showed that the newly developed low carbon high strength H-beam steel had excellent mechanical properties and good weldability.


2016 ◽  
Vol 46 (4) ◽  
pp. 237-240 ◽  
Author(s):  
O. S. Lekhov ◽  
E. Yu. Raskatov
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Author(s):  
Koji MORITA ◽  
Masaru TERAOKA ◽  
Takahiko SUZUKI ◽  
Toshio FUJIWARA ◽  
Hisaaki YABUSAME

1981 ◽  
Vol 4 ◽  
Author(s):  
C J Pollard ◽  
A E Glaccum ◽  
J D Speight

ABSTRACTThe optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.


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