scholarly journals Models for Total-Dose Radiation Effects in Non-Volatile Memory

2017 ◽  
Author(s):  
Philip Montgomery Campbell ◽  
Steven D. Wix
Keyword(s):  
Total Dose ◽  
Radiation Effects ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Dose Radiation

Total Dose Radiation Effects In Si Nanocrystal Non-Volatile Memory Transistors

2004 ◽  
Vol 851 ◽  
Author(s):  
Mihail P. Petkov ◽  
L. Douglas Bell ◽  
Robert J. Walters ◽  
Harry A. Atwater
Keyword(s):  
Ion Implantation ◽  
Total Dose ◽  
Radiation Effects ◽  
Memory Cells ◽  
Si Nanocrystal ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Dose Tolerance ◽  
Dose Radiation ◽  
High Total Dose

ABSTRACTWe report results pertinent to the high total dose tolerance of Si nanocrystal non-volatile memory cells. The nc-Si FETs made by ion implantation retained virtually unchanged write / erase characteristics, typical for the two-state devices, to cumulative doses exceeding 15 Mrad(Si).

Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements

2008 ◽  
Vol 55 (6) ◽  
pp. 3202-3205 ◽  
Author(s):  
Bruce Draper ◽  
Robert Dockerty ◽  
Marty Shaneyfelt ◽  
Scott Habermehl ◽  
James Murray
Keyword(s):  
Total Dose ◽  
Radiation Response ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Dose Radiation

scholarly journals Overview of radiation effects on emerging non-volatile memory technologies

2017 ◽  
Vol 32 (4) ◽  
pp. 381-392
Author(s):  
Irfan Fetahovic ◽  
Edin Dolicanin ◽  
Djordje Lazarevic ◽  
Boris Loncar
Keyword(s):  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
High Radiation ◽  
Different Types ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

Single event upset and total dose radiation effects on rad-hard SRAMs

1990 ◽  
Vol 19 (7) ◽  
pp. 689-697
Author(s):  
V. Zajic ◽  
K. Kloesel ◽  
D. Ngo ◽  
P. M. Kibuule ◽  
A. Oladipupo ◽  
...  
Keyword(s):  
Total Dose ◽  
Radiation Effects ◽  
Single Event Upset ◽  
Single Event ◽  
Dose Radiation

A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs

2019 ◽  
Vol 27 (1) ◽  
pp. 1159-1163 ◽  
Author(s):  
Hao Tang ◽  
Yi Wang ◽  
Jinyan Wang ◽  
Yijun Zheng ◽  
Yufeng Jin
Keyword(s):  
Total Dose ◽  
Radiation Effects ◽  
Dose Radiation

γ-Ray Total Dose Radiation Effects of Pt/PbZr0.52Ti0.48/Pt and Au/PbTiO3/YBa2Cu3O7-δFerroelectric Capacitors

1998 ◽  
Vol 37 (Part 1, No. 9B) ◽  
pp. 5126-5127 ◽  
Author(s):  
Jianxia Gao ◽  
Lirong Zheng ◽  
Jianming Zeng ◽  
Chenglu Lin
Keyword(s):  
Total Dose ◽  
Radiation Effects ◽  
Γ Ray ◽  
Dose Radiation
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