scholarly journals Hardness Assurance for Low-Energy Proton-Induced Single-Event Effects: Final report for LDRD Project 173134

2015 ◽  
Author(s):  
Nathaniel Anson Dodds
Keyword(s):  
Low Energy ◽  
Final Report ◽  
Single Event ◽  
Single Event Effects ◽  
Energy Proton

Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 system-on chip

2017 ◽  
Vol 71 ◽  
pp. 65-70 ◽  
Author(s):  
Xuecheng Du ◽  
Shuhuan Liu ◽  
Dongyang Luo ◽  
Yao Zhang ◽  
Xiaozhi Du ◽  
...  
Keyword(s):  
System On Chip ◽  
Low Energy ◽  
Single Event ◽  
Single Event Effects ◽  
Energy Proton ◽  
On Chip

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

2008 ◽  
Vol 55 (6) ◽  
pp. 3394-3400 ◽  
Author(s):  
David F. Heidel ◽  
Paul W. Marshall ◽  
Kenneth A. LaBel ◽  
James R. Schwank ◽  
Kenneth P. Rodbell ◽  
...  
Keyword(s):  
Low Energy ◽  
Test Results ◽  
Single Event Upset ◽  
Single Event ◽  
Energy Proton

Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation

2017 ◽  
Vol 64 (1) ◽  
pp. 654-664 ◽  
Author(s):  
Zhenyu Wu ◽  
Shuming Chen ◽  
Junting Yu ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
...  
Keyword(s):  
Low Energy ◽  
Proton Radiation ◽  
Single Event ◽  
Nanometer Cmos ◽  
Single Event Upsets ◽  
Energy Proton

scholarly journals Single event upsets sensitivity of low energy proton in nanometer static random access memory

2016 ◽  
Vol 65 (6) ◽  
pp. 068501
Author(s):  
Luo Yin-Hong ◽  
Zhang Feng-Qi ◽  
Wang Yan-Ping ◽  
Wang Yuan-Ming ◽  
Guo Xiao-Qiang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Low Energy ◽  
Static Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets ◽  
Energy Proton

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

2018 ◽  
Vol 27 (7) ◽  
pp. 078501 ◽  
Author(s):  
Yin-Yong Luo ◽  
Feng-Qi Zhang ◽  
Xiao-Yu Pan ◽  
Hong-Xia Guo ◽  
Yuan-Ming Wang
Keyword(s):  
Low Energy ◽  
Single Event ◽  
Single Event Upsets ◽  
Energy Proton

Impact of Total Ionizing Dose on Low Energy Proton Single Event Upsets in Nanometer SRAM

2019 ◽  
Vol 66 (7) ◽  
pp. 1848-1853
Author(s):  
Yinhong Luo ◽  
Fengqi Zhang ◽  
Xiaoyu Pan ◽  
Hongxia Guo ◽  
Yuanming Wang
Keyword(s):  
Low Energy ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Upsets ◽  
Energy Proton
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