Progress report of Sandia National Laboratories (SNL) contribu- tion to IAEA CRP F11016 on ?Utilization of ion accelerators for studying and modeling of radiation induced defects in semicon- ductors and insulators? 3rd RCM.
1990 ◽
Vol 48
(4)
◽
pp. 92-93
1986 ◽
Vol 47
(C8)
◽
pp. C8-1045-C8-1048
1994 ◽
Vol 33
(Part 2, No. 2B)
◽
pp. L233-L234
◽
2008 ◽
Vol 266
(12-13)
◽
pp. 2834-2841
◽
1999 ◽
Vol 149
(1-4)
◽
pp. 69-72
◽