scholarly journals Commercialization of New Lattice-Matched Multi-Junction Solar Cells Based on Dilute Nitrides: July 8, 2010 - March 7, 2012

2012 ◽  
Author(s):  
John Herb
Keyword(s):  
Solar Cells ◽  
Dilute Nitrides ◽  
Lattice Matched

Using Dilute Nitrides to Achieve Record Solar Cell Efficiencies

2013 ◽  
Vol 1538 ◽  
pp. 161-166 ◽  
Author(s):  
Rebecca Jones-Albertus ◽  
Emily Becker ◽  
Robert Bergner ◽  
Taner Bilir ◽  
Daniel Derkacs ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
New World ◽  
Device Performance ◽  
Dilute Nitride ◽  
Dilute Nitrides ◽  
High Quality ◽  
Multijunction Solar Cells ◽  
World Records ◽  
Lattice Matched

ABSTRACTHigh quality dilute nitride subcells for multijunction solar cells are achieved using GaInNAsSb. The effects on device performance of Sb composition, strain and purity of the GaInNAsSb material are discussed. New world records in efficiency have been set with lattice-matched InGaP/GaAs/GaInNAsSb triple junction solar cells and a roadmap to 50% efficiency with lattice-matched multijunction solar cells using GaInNAsSb is shown.

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

2017 ◽  
Vol 10 (7) ◽  
pp. 075504 ◽  
Author(s):  
Keisuke Yamane ◽  
Masaya Goto ◽  
Kenjiro Takahashi ◽  
Kento Sato ◽  
Hiroto Sekiguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Substrate ◽  
Tandem Solar Cells ◽  
Lattice Matched

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

Lattice-matched and strained InGaAs solar cells for thermophotovoltaic use

1996 ◽  
Author(s):  
Raj K. Jain ◽  
David M. Wilt ◽  
Rakesh Jain ◽  
Geoffrey A. Landis ◽  
Dennis J. Flood
Keyword(s):  
Solar Cells ◽  
Lattice Matched

Comparative Study of >2 eV Lattice-Matched and Metamorphic (AL)GaInP Materials and Solar Cells Grown by MOCVD

2017 ◽  
Author(s):  
Daniel J. Chmielewski ◽  
Christine Jackson ◽  
Jacob Boyer ◽  
Daniel Lepkowski ◽  
John A. Carlin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Lattice Matched

Epitaxial Lifted-Off Thin Film GaInP/GaAs/GaInNAsSb Lattice-Matched Triple Junction Solar Cells

2019 ◽  
Author(s):  
Naoya Miyashita ◽  
Nazmul Ahsan ◽  
Yoshitaka Okada ◽  
Rao Tatavarti ◽  
Andree Wibowo ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Triple Junction ◽  
Lattice Matched

Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells

2014 ◽  
Vol 1635 ◽  
pp. 55-62
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Nathan Wells ◽  
Zachary Lingley ◽  
Nathan Presser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Performance ◽  
Cost Effective ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Time Resolved ◽  
Double Heterostructures ◽  
Lift Off ◽  
Lattice Matched

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

2013 ◽  
Vol 113 (12) ◽  
pp. 123509 ◽  
Author(s):  
S. Almosni ◽  
C. Robert ◽  
T. Nguyen Thanh ◽  
C. Cornet ◽  
A. Létoublon ◽  
...  
Keyword(s):  
Solar Cells ◽  
Lattice Matched

Metamorphic and Lattice-Matched Solar Cells Under Concentration

2006 ◽  
Author(s):  
R. King ◽  
D. Law ◽  
K. Edmondson ◽  
C. Fetzer ◽  
R. Sherif ◽  
...  
Keyword(s):  
Solar Cells ◽  
Lattice Matched
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