scholarly journals Apparent temperature versus true temperature of silicon crystals as a function of their thickness using infrared measurements

1993 ◽  
Author(s):  
R.K. Smither ◽  
P.B. Fernandez
Keyword(s):  
Apparent Temperature ◽  
True Temperature ◽  
Silicon Crystals ◽  
Infrared Measurements

Apparent Temperature Patterns Superposed on Thermal Infrared Images and Their Removal

1996 ◽  
Vol 8 (2) ◽  
pp. 136-143
Author(s):  
Minoru Inamura ◽  
Keyword(s):  
Infrared Image ◽  
Radiation Energy ◽  
Thermal Infrared ◽  
Absolute Temperature ◽  
Field Of View ◽  
Apparent Temperature ◽  
Large Field ◽  
True Temperature ◽  
Temperature Pattern ◽  
Effective Use

A thermal infrared image is a visualized image of the thermal energy radiated from an object. Thermal radiation energy is dependent on the absolute temperature and the effective emissivity of an object, so that a thermal infrared image does not give the temperature distribution of an object but, rather, is a superimposed image of, so to speak, the temperature pattern and the emissivity pattern. In other words, a emissivity pattern is an apparent temperature pattern superimposed on a true temperature pattern. However, this paper points out that a thermal infrared image obtained with a sensor having an instantaneously large field of view, like a remotely sensed image, has additionally a third pattern due to the size of the field of view superimposed and that this appears as an apparent temperature change on the thermal infrared image. Moreover, the paper stresses the fact that in order to obtain correct information on temperature, it is necessary to remove these patterns and, at the same time, points out that these can be removed if effective use is made of visible, multispectral images.

Temperature Mapping of Localized Hot Spots on Microelectronic Chip Surfaces

1991 ◽  
Vol 113 (3) ◽  
pp. 286-293 ◽  
Author(s):  
S. Heng ◽  
W. Z. Black
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Temperature Data ◽  
Temperature Measurements ◽  
Apparent Temperature ◽  
Surface Emissivity ◽  
Maximum Heat ◽  
Temperature Mapping ◽  
Infrared Measurements

This paper describes the use of digital image processing in conjunction with an infrared imaging apparatus to locate and quantify “micro” hot spot temperatures on the surface of energized microelectronic chips. Briefly, the temperature mapping/processing procedure creates emissivity maps for the surface of the chip at different isothermal conditions. The emissivity map images are digitized and stored as a 512 × 512 pixel array, of which 400 lines contain IR information. Apparent temperature measurements are then collected with the chip energized in its normal operating environment. These apparent temperature data are digitized and stored as a 512 × 512 integer array using the same format as the digitized emissivity data. Before correcting for emissivity variations, the apparent temperature images are rectified using digital image processing to precisely overlay the spatial coordinates of the emissivity map. Finally, actual temperature maps are obtained by correcting the apparent temperature data for the local emissivity variations and background reflections. The computer driven measurement technique has been applied to the task of measuring localized temperatures on areas as small as 30 μm on the surface of an energized chip to an accuracy of ±1°C once the surface emissivity is accurately known. The infrared equipment, image processing hardware and supporting software are used to measure the temperature distribution on the surface of a 4.7 mm × 4.7 mm energized chip. IR measured temperatures at isolated locations on the chip are compared with results obtained by the resistance-temperature technique. Since the resistance-temperature technique provides an area-averaged temperature for the energized region, the result obtained from the high resolution IR measurements yields higher localized temperatures. Results are presented for peak surface temperatures up to 100°C and maximum heat flux values of 7.9x106 W/m2. A separate set of infrared measurements are used to predict the influence of surface emissivity on the accuracy of the temperature measurements.

Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

1996 ◽  
Vol 441 ◽  
Author(s):  
Z. Yina ◽  
Z. L. Akkerman ◽  
W. Smith ◽  
R. Gat
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Film Growth ◽  
Apparent Temperature ◽  
Diamond Growth ◽  
Growth Surface ◽  
True Temperature ◽  
Film Growth Rate ◽  
Film Substrate

AbstractA model for the infrared radiation emitted by a film/substrate system has been developed which includes both the effects of interference in the growing film and of scattering from its rough growth surface. Predictions of the model for the time-dependence of the apparent temperature Tapp of the film/substrate system measured in-situ by both one-color and two-color infrared pyrometers are presented for the case of diamond growth on Si. Using this model, the following information can be obtained from in-situ pyrometric results in real time: the true temperature of the film/substrate system, the instantaneous film growth rate, and the rms surface roughness σ of the film.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Infrared measurements of droplets in the dense region of diesel fuel sprays

1997 ◽  
Author(s):  
Terry Parker ◽  
Luca Rainaldi ◽  
Eric Jepsen ◽  
Terry Parker ◽  
Luca Rainaldi ◽  
...  
Keyword(s):  
Diesel Fuel ◽  
Dense Region ◽  
Fuel Sprays ◽  
Infrared Measurements

Space Object Temperature Determination from Multi-Band Infrared Measurements

2008 ◽  
Author(s):  
Charles Paxson ◽  
Hilary E. Snell ◽  
James M. Griffin ◽  
Kathleen Kraemer ◽  
Steve Price ◽  
...  
Keyword(s):  
Space Object ◽  
Temperature Determination ◽  
Object Temperature ◽  
Infrared Measurements ◽  
Multi Band
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