Transport phenomena in quasi-two-dimensional graphite

2008 ◽  
Vol 6 ◽  
pp. 223-228
Author(s):  
N.E. Yakhanova ◽  
A.N. Chuvyrov
Keyword(s):  
Conducting Polymer ◽  
Transport Phenomena ◽  
Carbon Films ◽  
Chemical Activity ◽  
Two Dimensional ◽  
High Quality

High-quality carbon films with the structure of a quasi-two-dimensional nanogram with a size of flat nanoclusters of about 5.0-6.0 nm were obtained using crystalline polyacetylene, which in itself is a conducting polymer, but with extremely low chemical activity.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

scholarly journals Fabricating centimeter-scale high quality factor two-dimensional periodic photonic crystal slabs

2014 ◽  
Vol 22 (3) ◽  
pp. 3724 ◽  
Author(s):  
Jeongwon Lee ◽  
Bo Zhen ◽  
Song-Liang Chua ◽  
Ofer Shapira ◽  
Marin Soljačić
Keyword(s):  
Photonic Crystal ◽  
Quality Factor ◽  
High Quality Factor ◽  
Two Dimensional ◽  
High Quality ◽  
Photonic Crystal Slabs

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
High Quality ◽  
Boron Nitride Films

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

1999 ◽  
Vol 572 ◽  
Author(s):  
W. L. Samey ◽  
L. Salamanca-Riba ◽  
P. Zhou ◽  
M. G. Spencer ◽  
C. Taylor ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
High Quality ◽  
Flow Rates ◽  
Si Substrates ◽  
Cvd Growth ◽  
Polytype Transformation ◽  
Si Films ◽  
Sic Film ◽  
Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

Publisher’s Note: Magnetoresistance effects and phase coherent transport phenomena in a magnetic nonplanar two-dimensional hole system [Phys. Rev. B84, 205302 (2011)]

2011 ◽  
Vol 84 (19) ◽  
Author(s):  
Stefan Knott ◽  
Thomas Ch. Hirschmann ◽  
Ursula Wurstbauer ◽  
Wolfgang Hansen ◽  
Werner Wegscheider
Keyword(s):  
Transport Phenomena ◽  
Two Dimensional ◽  
Coherent Transport

Tailoring the Electronic Structure and Chemical Activity of Iron via Confining into Two-Dimensional Materials

2018 ◽  
Vol 122 (42) ◽  
pp. 24037-24045 ◽  
Author(s):  
Dan Luo ◽  
Pengju Ren ◽  
Xingchen Liu ◽  
Rui Gao ◽  
Yuwei Zhou ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Activity ◽  
Two Dimensional ◽  
Two Dimensional Materials
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